SI5433BDC-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5433BDC-T1-GE3TR-ND

Manufacturer Part#:

SI5433BDC-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 4.8A 1206-8
More Detail: P-Channel 20V 4.8A (Ta) 1.3W (Ta) Surface Mount 12...
DataSheet: SI5433BDC-T1-GE3 datasheetSI5433BDC-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5433BDC-T1-GE3 is a type of transistor known as a metal-oxide-semiconductor field-effect transistor (MOSFET). This transistor is able to control the flow of electricity, making it a popular choice in the world of electronics. As such, it\'s an important component that\'s used in countless applications across many fields.The SI5433BDC-T1-GE3 is a single transistor, meaning it features one source, one gate, and one drain. It operates using the principle of a field-effect, whereby when electrons move through the gate, they create an electric field that modulates the semiconductor and can either enhance or reduce the current flowing through the source-drain path.The SI5433BDC-T1-GE3 is most commonly used in applications where temperature resistance and high voltage compatibility are required. It can also handle frequencies of up to 4GHz, making it a popular choice for wireless communication systems and consumer electronics. Its high power and efficient power dissipation make it an ideal choice for high-power applications too.The range of consumer electronic applications for which the SI5433BDC-T1-GE3 is suitable is vast. It\'s commonly used in personal electronics such as mobile phones, tablets, and pagers. It can be found in consumer electronics such as microwaves, air conditioners, and televisions. The SI5433BDC-T1-GE3 can also be used in industrial applications such as motor control and driving, lighting, and HVAC systems.The SI5433BDC-T1-GE3 also has a variety of alternative uses, such as in sensor systems, solar cells, and RF circuits. It can also be used to improve the efficiency of automotive charging systems.As an alternative to the SI5433BDC-T1-GE3, low threshold MOSFETs can also be used for similar applications. Low threshold MOSFETs have a lower threshold voltage, meaning they require less voltage to turn on and off. They are typically less efficient than the SI5433BDC-T1-GE3 and can cause ringing and phase delay, so they are not suitable for all applications where noise and phase delay are a concern.The SI5433BDC-T1-GE3 is widely regarded as one of the best single transistors for a variety of applications. It\'s widely available, and is known for its reliability, efficiency, and power capacity. As such, it\'s a popular choice for a variety of projects, from consumer electronics to industrial automation.

The specific data is subject to PDF, and the above content is for reference

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