Current limiting power controller - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPP04CN10NGXKSA 1-ND	IPP04CN10NGXKSA 1	Infineon Technologies	View more Series: * Part Status: Not For New Designs	1000 Order	500+: $2.5835
SIPC03S2N03LX3M A1-ND	SIPC03S2N03LX3M A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	5000+: $0.2169
IPP076N15N5AKSA 1-ND	IPP076N15N5AKSA 1	Infineon Technologies	View more Series: * Part Status: Active	616 Order	1+: $3.2508 10+: $2.9043 100+: $2.3814 500+: $1.9284 1000+: $1.6263
IPC302N15N3X7SA 1-ND	IPC302N15N3X7SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	4425+: $1.9526
ON5194,127-ND	ON5194,127	Nexperia USA Inc.	View more Part Status: Obsolete	1000 Order	1+: $0
IPC218N04N3X7SA 1-ND	IPC218N04N3X7SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	6195+: $1.2751
IPC30S2SN08NX2M A1-ND	IPC30S2SN08NX2M A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	3000+: $1.6667
IPI051N15N5AKSA 1-ND	IPI051N15N5AKSA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	500+: $2.8419
IPT029N08N5ATMA 1-ND	IPT029N08N5ATMA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	2000+: $1.5414
BSC020N03LSGATM A2-ND	BSC020N03LSGATM A2	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	5000+: $0.37
FDMS3500TR-ND	FDMS3500	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 9.2A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 40V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power Clip 56 Package / Case: 8-PowerTDFN	9000 Order	--
TPH7R204PLLQTR- ND	TPH7R204PL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 2.4V @ 200A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 20V Power Dissipation (Max): 69W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.2122
296-45230-2-ND	CSD18511Q5AT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 159A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 24A, 4.5V Vgs(th) (Max) @ Id: 2.45V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 10V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
296-45231-2-ND	CSD18513Q5AT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 20V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	750 Order	250+: $0.553 500+: $0.4887 750+: $0.4269 1250+: $0.3858
296-47449-2-ND	CSD18511KTTT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 110A (Ta), 194A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 20V Power Dissipation (Max): 188W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, DPak (3 Leads + Tab), TO-263AA	400 Order	50+: $1.0433 100+: $0.939 250+: $0.8346
296-45025-2-ND	CSD17581Q3AT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	1000 Order	--
296-45229-2-ND	CSD18510KTTT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 274A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 15V Power Dissipation (Max): 250W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DDPAK/TO-263-3 Package / Case: TO-263-4, DPak (3 Leads + Tab), TO-263AA	250 Order	50+: $1.4454 100+: $1.3008 250+: $1.1563
RQ6C050BCTCRTR- ND	RQ6C050BCTCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 36 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Power Dissipation (Max): 1.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SC-95-6	1000 Order	3000+: $0.207
IXTA270N04T4-7- ND	IXTA270N04T4-7	IXYS	View more Series: TrenchT4 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 9140pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, DPak (6 Leads + Tab)	50 Order	1+: $2.3562 50+: $1.891 100+: $1.7229 500+: $1.3951 1000+: $1.1766
TPH7R006PLL1QTR -ND	TPH7R006PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 30V Power Dissipation (Max): 81W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.3324
RQ6C065BCTCRTR- ND	RQ6C065BCTCR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 10V Power Dissipation (Max): 1.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SC-95-6	1000 Order	3000+: $0.1859
TK25V60XLQ-ND	TK25V60X,LQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 135 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V Power Dissipation (Max): 180W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	1000 Order	2500+: $1.5803
FDMC86260TR-ND	FDMC86260	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 5.4A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 75V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN Base Part Number: FDMC86260	1000 Order	--
TPCC8093L1Q-ND	TPCC8093,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.1487
TPW1R306PLL1QTR -ND	TPW1R306PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.29 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 30V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.9274
FDMC7672_F125-N D	FDMC7672_F125	ON Semiconductor	View more Series: PowerTrench, SyncFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16.9A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 15V Power Dissipation (Max): 2.3W (Ta), 33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	1+: $0
TPHR9203PLL1QTR -ND	TPHR9203PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 500A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 15V Power Dissipation (Max): 132W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	5000 Order	5000+: $0.551
TPH3R003PLLQTR- ND	TPH3R003PL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 300A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 15V Power Dissipation (Max): 90W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	3000 Order	3000+: $0.3307
TPH2R506PLL1QTR -ND	TPH2R506PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 30A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 30V Power Dissipation (Max): 132W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	9980 Order	5000+: $0.6452
TPN1R603PLL1QTR -ND	TPN1R603PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 10V @ 10A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Power Dissipation (Max): 104W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	5000 Order	5000+: $0.3623
296-45302-2-ND	CSD18543Q3AT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 12A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 30V Power Dissipation (Max): 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerVDFN	13250 Order	--
TPW1R005PLL1QTR -ND	TPW1R005PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 22.5V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.8194
SCTWA30N120-ND	SCTWA30N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $12.1716
SCTWA10N120-ND	SCTWA10N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $4.7867
SCTWA20N120-ND	SCTWA20N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $5.8373
STL12HN65M2-ND	STL12HN65M2	STMicroelectronics	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: PowerFlat (5x6) HV Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.6553
FDMS8333LTR-ND	FDMS8333L	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 22A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4545pF @ 20V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
FDMS86263PTR-ND	FDMS86263P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 4.4A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3905pF @ 75V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
FDMC8360LET40OS TR-ND	FDMC8360LET40	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 27A (Ta), 141A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 20V Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	3000 Order	3000+: $0.5211
TPH4R10ANLL1Q-N D	TPH4R10ANL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 92A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6.3nF @ 50V Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.4673

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