| Allicdata Part #: | FDMS86263PTR-ND |
| Manufacturer Part#: |
FDMS86263P |
| Price: | $ 1.52 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 150V 22A POWER 56 |
| More Detail: | P-Channel 150V 4.4A (Ta), 22A (Tc) 2.5W (Ta), 104W... |
| DataSheet: | FDMS86263P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.52000 |
| 10 +: | $ 1.47440 |
| 100 +: | $ 1.44400 |
| 1000 +: | $ 1.41360 |
| 10000 +: | $ 1.36800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3905pF @ 75V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 53 mOhm @ 4.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.4A (Ta), 22A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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.FDMS86263P Application Field and Working Principle
FDMS86263P, which belongs to the Transistors - FETs, MOSFETs - Single family of components, is an insulated gate field-effect transistor (IGFET) designed for high-voltage electronic applications. This type of component, commonly referred to as a power MOSFET, is able to handle large currents and voltages and features a low resistance channel that can be operated from a single voltage supply. The FDMS86263P power MOSFET is designed for very high voltage, high current applications, including dc–dc converters, motor drives, inverters, power control circuits, and uninterruptible power supplies.
Structure of the Component
The FDMS86263P is a single-chip, depletion-mode MOSFET. It is constructed using an insulated-gate bipolar transistor (IGBT) and a high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET). The insulated gate transmits electrical signals to the transistor gate, which controls the current flow between source and drain.
Special Features of the FDMS86263P
The FDMS86263P features a super junction structure, where the highly doped p-type and n-type pockets allow for a wide range of applications up to a maximum gate-drain voltage of 600V. It is also able to tolerate high levels of power dissipation up to 20 W, making it suitable for advanced power control circuit implementations. Additionally, the device features low leakage current and low input capacitance, ensuring fast switching times.
Operation of the FDMS86263P
The FDMS86263P operates by controlling the voltage applied to the gate of the MOSFET. The gate voltage influences the resistance of the current path between the source and drain by controlling the amount of current that flows through the device. With the gate voltage increased, the MOSFET\'s resistance is reduced, allowing more current to flow through the device and increasing the voltage drop between the source and the drain. Conversely, when the gate voltage is decreased, the MOSFET\'s resistance is increased, limiting the current flow through the device and reducing the voltage drop between the source and the drain.
Applications of the FDMS86263P
Due to its high voltage and high current capacity, the FDMS86263P is commonly used in applications such as dc-dc converters, motor drives, inverters, uninterruptible power supplies, and power control circuits. It is also used in a variety of other applications such as solar cell controllers, lighting ballasts, and induction heating circuits.
The specific data is subject to PDF, and the above content is for reference
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FDMS86263P Datasheet/PDF