CSD18513Q5AT Discrete Semiconductor Products

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The CSD18513Q5AT is an N-Channel enhancement type power field effect transistor (FET), which is highly advantageous in applications that require high blocking voltages and current capacities. The CSD18513Q5AT is a silicon based MOSFET device which is built on a robust and cost effective architecture. This makes the device ideally suitable for applications such as power switching, high power audio, lighting, electric motor control, and various other applications that need a large amount of current.

The CSD18513Q5AT’s architecture is such that it consists of a single FET configured with multiple gates on its drain and source regions. This provides a very high input impedance and a low output impedance, allowing the CSD18513Q5AT to exhibit excellent characteristics such as high blocking voltage and current capacity, making it suitable in applications which require high blocking voltages and currents.

The CSD18513Q5AT is also able to function in temperatures that range from -55˚C to +150˚C, making it highly robust and reliable. This makes the device ideal for applications that are to be used in extreme conditions. The CSD18513Q5AT’s impressive features also extend to its control gate, which is able to maintain a gate voltage as low as 0.3V and can reach a maximum of 8V. This allows the CSD18513Q5AT to offer excellent performance, both in switching and linear mode operation.

The working principle of the CSD18513Q5AT lies in its architecture, which consists of a single FET configured with multiple gates on its drain and source regions. When the control gate of the FET is driven to a negative voltage, this allows the channel between the source and drain to conduct current, allowing the FET to switch on. Conversely, when the control gate of the FET is driven to a positive voltage, the channel between the source and drain is cut off, allowing the FET to switch off.

In applications that need to convert AC input to DC output, the CSD18513Q5AT can be used is a power switch. This is achieved by utilizing the CSD18513Q5AT’s ability to switch on and off in consecutive cycles, allowing it to convert AC currents to DC signals with minimal energy loss. Power switch applications of the CSD18513Q5AT are commonly found in power supplies, uninterruptible power supplies, solar panel inverters, motor control systems and light dimmers, as well as various other applications which need a large amount of power to be switched.

In conclusion, the CSD18513Q5AT is a highly reliable and cost effective N-Channel enhancement type power MOSFET, offering excellent characteristics such as a high blocking voltage and current capacity, an impressive operating temperature range, and a low gate voltage. For these reasons, the CSD18513Q5AT is ideally used in applications such as power switching, high power audio, lighting, electric motor control, and various other applications that need a large amount of current.

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