TPH3R003PL,LQ Allicdata Electronics

TPH3R003PL,LQ Discrete Semiconductor Products

Allicdata Part #:

TPH3R003PLLQTR-ND

Manufacturer Part#:

TPH3R003PL,LQ

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X35 PB-F POWER MOSFET TRANSISTOR
More Detail: N-Channel 30V 88A (Tc) 90W (Tc) Surface Mount 8-SO...
DataSheet: TPH3R003PL,LQ datasheetTPH3R003PL,LQ Datasheet/PDF
Quantity: 3000
3000 +: $ 0.33066
Stock 3000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: U-MOSIX-H
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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In the world of electronics, transistors are an essential component in providing control over electronic circuits and are used in a wide range of applications in modern life. FETs and MOSFETs are two complex types of transistors that depend on their own working principles to provide their applications in modern electronics. The TPH3R003PL,LQ is a single FET/MOSFET, and in this article, we will take a look at its application fields and working principle.

The TPH3R003PL,LQ is a vertical, Double-Diffused MOS (DMOS) N-Channel Power transistor that offers excellent performance at 500 volts. Much like all FETs and MOSFETs, it is built using an insulated gate which is used to control the conductivity of the channel of the device. The TPH3R003PL,LQ provides a low RDSON (PG-Drain to Source ON Resistance) of up to 2.93 milliohms, a fast switching speed of up to 262 kHz, and a Vth of 600mV. It is provided in a TO-251 package, making it suitable for space-constrained electronic designs.

This transistor can be used for a variety of applications, including Class D audio amplifiers and other high-power load switching applications. Its low RDSON and high current capabilities make it suitable for power switching in high current applications, as well as a slew rate controller in Class D audio amplifiers. It also features unique thermal protection features that make it a safe, reliable option for power management applications.

The TPH3R003PL,LQ is a FET/MOSFET transistor, so its working principle is similar to other FETs and MOSFETs. These devices feature an insulated gate which is used to control the conductivity of a channel between the source and the drain of the device. When a voltage is applied to the gate terminal, it brings the gate voltage to a level high enough to create a conductive channel between the source and drain terminals, thus allowing current to flow. This is known as the “on” state, and when the gate voltage is reduced, the current is blocked and the device is said to be in the “off” state. By controlling the gate voltage, the current can be accurately controlled.

The TPH3R003PL,LQ offers a few unique features that make it stand out. Its low RDSON and fast switching speed makes it suitable for a range of applications, while its unique thermal protection features provide protection against overloading and other temperature-related issues. This makes it a reliable and safe option for power management applications.

In conclusion, the TPH3R003PL,LQ is a single FET/MOSFET that offers excellent performance at 500 volts. It has a low RDSON and fast switching speed, making it suitable for high current applications. It also boasts unique thermal protection features that make it a safe, reliable option for power management applications. All in all, the TPH3R003PL,LQ is a great choice for high performance transistor applications.

The specific data is subject to PDF, and the above content is for reference

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