CSD18511Q5AT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CSD18511Q5AT is a single N-Channel UltraFET power MOSFET developed by Texas Instruments. It is designed specifically for automotive load switching and powerManagement applications, such as body control module (BCM), fuel pump controls, and transmission control applications. The ultraFET technology in the CSD18511Q5AT helps to achieve lower on-state resistance and superior ruggedness compared to other power MOSFETs.

The CSD18511Q5AT utilizes Uniformed Gate Power Technology to ensure extremely low switching loss and higher reliability. This technology also allows for longer battery life and improved efficiency in automotive applications, by eliminating unnecessary power consumption. This improved efficiency helps reduce the cost and size of the power supply circuit and allows for more compact system designs.

The CSD18511Q5AT is rated at 2.5V drain-source voltage with a maximum drain current of 57A, peak drain current of 87A, and a drain-source on resistance of 5.8mOhms. It features high-side Gate control with an integrated level shifter for direct logic-level control, and it has an integrated ESD diode for protection from electromagnetic interference. It has a wide operating temperature range from -55°C to + 175°C and is qualified to AEC-Q101 standards for maximum reliability in automotive power applications.

The CSD18511Q5AT features Zero Cross-conduction, which prevents shoot-through current and maximizes system efficiency. The integrated ESD diode helps protect the MOSFET from electrical static discharge. The low on-state resistance of the MOSFET reduces power dissipation, providing better power efficiency and higher reliability. It also helps reduce the cost and size of the power supply circuit, resulting in a more compact system design.

The working principle of the CSD18511Q5AT is based on that of a typical power MOSFET. A Gate voltage is applied to the MOSFET, which controls the flow of current through the MOSFET. When a voltage is applied to the Gate, an electric field is created between the Drain and Source, which controls the flow of electrons in the channel. This electric field allows current to flow from the Drain to the Source, thus allowing current to flow from the battery to the load.

The main application for the CSD18511Q5AT is in automotive systems. It is ideal for high current switch applications, such as fuel pump controls, transmission control, and body control module (BCM) applications. The low on-resistance, zero cross-conduction, and integrated ESD diode provide enhanced protection and improved power efficiency for automotive systems in harsh conditions. The wide operating temperature range and AEC-Q101 qualified make it suitable for a wide range of automotive applications. The CSD18511Q5AT is an ideal choice for automotive system designers looking to minimize power dissipation and have maximum reliability.

The specific data is subject to PDF, and the above content is for reference