CSD18543Q3AT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CSD18543Q3AT is a special type of field-effect transistor (FET) designed for high-power switching applications. It is a single-gate MOSFET, which means that it consists of just one control terminal instead of the normal three. This type of FET is often referred to as a “trench FET” due to the way in which its shallow trench isolation (STI) construction is made. The STI technology permits higher current flow and faster switching speeds than conventional MOSFETs, while also providing improved noise immunity. This is achieved by utilizing a deep trench in the substrate material, which creates an insulator between the source and drain terminals and helps to reduce the leakage current.

The CSD18543Q3AT is an ideal choice for applications where high input impedance, high current, and low power consumption are critical. It features a low input capacitance, which helps to reduce the input current that is created when the voltage changes. This low capacitance also results in improved switching speeds and allows for operation in a wide range of temperatures. It is also capable of handling large voltages and currents without suffering from overshoot or other anomalies.

In terms of its working principle, the CSD18543Q3AT takes advantage of its single-gate technology to enable an entire circuit to be turned on or off with a single control input. This allows the device to be used in sophisticated applications such as motor control, power supplies, and switch mode power supplies. When the control input (gate voltage) is larger than the threshold voltage of the device, the overall circuit is turned on. Otherwise, the circuit remains off. The use of this device can help to reduce the size and complexity of some high-power applications, since only a small number of components are required to control the circuit.

The CSD18543Q3AT is also designed with reliability and durability in mind. It is constructed with a structure that is immune to electro-migration and thermal runaway, and it is capable of withstanding voltages up to 25 volts. It also offers a well-defined and controlled current flow, which helps to reduce switching losses. This means that the device can be used in a variety of applications where efficiency is of paramount importance.

In conclusion, the CSD18543Q3AT is a single-gate MOSFET designed for high-power switching applications. It features a low input capacitance and can handle large voltages and currents without suffering from overshoot. Its single-gate technology enables an entire circuit to be turned on or off with a single control input, while its reliable and durable construction make it ideal for use in demanding applications.

The specific data is subject to PDF, and the above content is for reference