Igbt gate driver - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FDD16AN08A0-F08 5TR-ND	FDD16AN08A0-F08 5	ON Semiconductor	View more Series: Automotive, AEC-Q101, UltraFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1874pF @ 25V Power Dissipation (Max): 135W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4284
1727-1858-2-ND	PSMN0R9-30YLDX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 300A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.87 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7668pF @ 15V Power Dissipation (Max): 291W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	1000 Order	1500+: $0.5108
497-16491-2-ND	STD7LN80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.5575
497-14991-2-ND	STL8N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V Power Dissipation (Max): 3.5W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.5956
SI4842BDY-T1-GE 3TR-ND	SI4842BDY-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 15V Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	2500 Order	--
SIHH24N65EF-T1- GE3TR-ND	SIHH24N65EF-T1- GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V Power Dissipation (Max): 202W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 8 x 8 Package / Case: 8-PowerTDFN	1000 Order	3000+: $2.9216
IRFH4210DTRPBFT R-ND	IRFH4210DTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.1V @ 100A Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4812pF @ 13V Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
IPL60R210P6AUMA 1TR-ND	IPL60R210P6AUMA 1	Infineon Technologies	View more Series: CoolMOS P6 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 19.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 630A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	1000 Order	3000+: $0.9159
497-3156-2-ND	STD25NF10LT4	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
FDN335NTR-ND	FDN335N	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	77 Order	--
DMP4013LFG-7DIT R-ND	DMP4013LFG-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 10.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	1000 Order	--
1727-4272-2-ND	PSMN8R2-80YS,11 5	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 40V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.3347
BSZ042N06NSATMA 1TR-ND	BSZ042N06NSATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 17A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.8V @ 36A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.4773
BSC028N06NSATMA 1TR-ND	BSC028N06NSATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.8V @ 50A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 30V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.6087
FDMS86101DCTR-N D	FDMS86101DC	ON Semiconductor	View more Series: Dual Cool, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 14.5A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3135pF @ 50V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool56 Package / Case: 8-PowerTDFN	1000 Order	--
C2M0280120D-ND	C2M0280120D	Cree/Wolfspeed	View more Series: Z-FET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	8047 Order	1+: $4.4856
DMN4020LFDE-7DI TR-ND	DMN4020LFDE-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power Dissipation (Max): 660mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
IPA80R450P7XKSA 1-ND	IPA80R450P7XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 220A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 29W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $1.5309 10+: $1.3847 100+: $1.1126 500+: $0.8653 1000+: $0.717
497-14972-2-ND	STB28N60M2	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRFB260NPBF-ND	IRFB260NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4220pF @ 25V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	5 Order	--
FDMA7628TR-ND	FDMA7628	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	3000 Order	--
FQT1N80TF-WSTR- ND	FQT1N80TF-WS	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V Power Dissipation (Max): 2.1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-4, TO-261AA	1000 Order	4000+: $0.3062
IXFA4N100Q-TRLT R-ND	IXFA4N100Q-TRL	IXYS	View more Series: HiPerFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $2.6843
1727-2588-2-ND	PSMN010-80YLX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6506pF @ 25V Power Dissipation (Max): 194W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.2729
STH130N8F7-2-ND	STH130N8F7-2	STMicroelectronics	View more Series: STripFET F7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 205W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.728
NVMFS5A140PLZWF T1GOSTR-ND	NVMFS5A140PLZWF T1G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 20V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $1.0143
FCPF7N60NT-ND	FCPF7N60NT	ON Semiconductor	View more Series: SupreMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V Power Dissipation (Max): 30.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $2.2743 10+: $2.0286 100+: $1.6635 500+: $1.347 1000+: $1.136
IPB60R060C7ATMA 1TR-ND	IPB60R060C7ATMA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Vgs(th) (Max) @ Id: 4V @ 800A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Power Dissipation (Max): 162W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, DPak (3 Leads + Tab), TO-263AA	1000 Order	1000+: $3.0106
IPP60R090CFD7XK SA1-ND	IPP60R090CFD7XK SA1	Infineon Technologies	View more Series: OptiMOS Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 11.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 570A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 400V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	478 Order	1+: $4.8384 10+: $4.3174 100+: $3.5404 500+: $2.8668 1000+: $2.4178
DMN4020LFDE-13D ITR-ND	DMN4020LFDE-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power Dissipation (Max): 660mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	1000 Order	10000+: $0.1144
IRFHS8242TRPBF- ND	IRFHS8242TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 9.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	1000 Order	--
ES6U42T2R-ND	ES6U42T2R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	1000 Order	8000+: $0.1324
DKI03062TR-ND	DKI03062	Sanken	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V Power Dissipation (Max): 37W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	15000+: $0.1601
AON3402-ND	AON3402	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 13 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (2.9x2.3) Package / Case: 8-SMD, Flat Lead	1000 Order	--
785-1353-2-ND	AOD458	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -50C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
AOI442-ND	AOI442	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 7A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	--
BSF035NE2LQXUMA 1-ND	BSF035NE2LQXUMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 22A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 12V Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M Package / Case: 3-WDSON	1000 Order	5000+: $0.2711
NVMFS5C646NLAFT 3G-ND	NVMFS5C646NLAFT 3G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	5000+: $0.2749
NTD2955GOS-ND	NTD2955G	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power Dissipation (Max): 55W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
NTD5406NT4G-ND	NTD5406NT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 12.2A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V Power Dissipation (Max): 3W (Ta), 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--

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