FCPF7N60NT Allicdata Electronics
Allicdata Part #:

FCPF7N60NT-ND

Manufacturer Part#:

FCPF7N60NT

Price: $ 2.50
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 6.8A TO-220F
More Detail: N-Channel 600V 6.8A (Tc) 30.5W (Tc) Through Hole T...
DataSheet: FCPF7N60NT datasheetFCPF7N60NT Datasheet/PDF
Quantity: 1000
1 +: $ 2.27430
10 +: $ 2.02860
100 +: $ 1.66345
500 +: $ 1.34699
1000 +: $ 1.13602
Stock 1000Can Ship Immediately
$ 2.5
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
Series: SupreMOS™
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCPF7N60NT is an N-channel enhancement-mode field-effect transistor that is an ideal choice in power switching applications. This device is fabricated with a trench gate structure, which provides the high-voltage retention that is necessary when used in high-frequency and high-efficiency applications. This device has low gate charge and is low ON resistance, which results in low conduction and switching loss. All of these features make the FCPF7N60NT a highly efficient and reliable device for power switching applications.

The FCPF7N60NT has an operating voltage range of 4.5V to 17V and a continuous drain current of 60A. The device also has an avalanche energy rating of 7nC and a maximum pulse current of 360A. The FCPF7N60NT allows a very low threshold voltage, which ensures that it can be used in a wide variety of power applications with no additional circuitry.

The FCPF7N60NT is an enhancement mode field-effect transistor―a transistor that is in its off state when the gate-source voltage is zero. To turn the device on, a positive voltage must be applied to the gate. When this positive voltage is applied, current can flow between the source and drain terminals. The amount of current that is allowed to flow depends on the voltage that is applied to the gate terminal and the bias current that is applied to the gate-source junction.

The FCPF7N60NT has great performance qualities in areas that require high current, high voltage, and high power, such as television power supplies, adjustable power supplies, UPSs, computer power supply, motor drive circuits, and IGBT inverter circuits. It is also great for low-frequency power supply applications, such as DC-DC converters, LED lighting, LCD displays, audio amplifiers, disc drives, etc.

The FCPF7N60NT is a great choice for switching applications due to its low ON resistance or RDS(on). This low resistance allows for decreased power consumption and improved efficiency. The device also has very low gate charge which is beneficial for applications that require fast voltage transitions. The FCPF7N60NT also has excellent performance qualities when used in high-frequency switching designs due to its low capacitance between the gate and the source.

The FCPF7N60NT has many advantages over other MOSFETs due its low cost, low on-resistance, and high current-handling capabilities. It is a great solution for power switching applications that require high efficiency and high-frequency operation. With its excellent performance qualities, this device is a great choice for applications that require high voltage retention and low gate charge.

The specific data is subject to PDF, and the above content is for reference

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