IRFH4210DTRPBF

IRFH4210DTRPBF is a single N-Channel Enhancement Mode MOSFET developed by International Rectifier. This field-effect transistor (FET) is a voltage controlled device, and is typically found in various consumer electronics and industrial products. The IRFH4210DTRPBF is mainly used to provide an controlled current source to circuits, and is considered to be an ideal replacement for discrete components.

Characteristics:

This transistor device comes with a maximum drain current of 30 AMPERES . It features a continuous drain current of 15 AMPERES, a drain to source voltage of 20 Volts and a maximum gate-source voltage of 20 Volts. It also has a maximum power dissipation of 250 Watts, a maximum junction temperature of 150 degrees Celsius and an on-resistance (drain to source) of 1.85 ohms.

Application Fields:

The IRFH4210DTRPBF is mainly used for switching applications in consumer electronics and other industrial products. Most of these boards and products require an efficient power source in order to run. The transistor is capable of providing an controlled source of current to these devices, and allows them to run properly with low power consumption.

Working Principle:

The working principle of the FET is based on the principle of a capacitor and field effect. The capacitive load produces an electric field and the gate current is injected into the channel of the FET in order to control the current flow through the channel. This principle is used in most of the digital logic circuits where the transistor serves as a switch.

The device is also used to drive an array of logic circuits. The Gate-Source voltage applied to the transistor will determine the resistance of the channel between the drain and the source which will control the flow of current through the device.

Conclusion:

The IRFH4210DTRPBF is a voltage controlled single N-Channel Enhancement Mode MOSFET. It is mainly used for switching applications in various consumer electronics and industrial products, where it provides an efficient source of current and allows the connected products to run with low power consumption. Its working principle is based on the capacitive-load principle and electric field.

The IRFH4210DTRPBF is an efficient and cost-effective choice for people looking for a reliable transistor. It offers a maximum drain current of 30 Amperes, a continuous drain current of 15 Amperes, an on-resistance(drain to source) of 1.85 ohms and a maximum power dissipation capacity of 250 Watts.