IPL60R210P6AUMA1

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The IPL60R210P6AUMA1 is a single N-channel enhancement mode MOSFET developed by Infineon Technologies. It is designed for use in applications from off-line isolated dc/dc converters to synchronous rectifiers in DC/DC and AC/DC power supplies.

The IPL60R210P6AUMA1 is a semiconductor device that combines a transistor and a field effect transistor (FET). It is composed of both p-type and n-type materials. The p-type material acts as the source and the n-type material is the drain. The gate stands between the source and drain and can control the current flow between the two. When the gate voltage is applied, it creates an electric field that bridges the two material types, allowing conduction to take place.

The IPL60R210P6AUMA1 offers two key features that make it an ideal choice for applications requiring low on-state resistance: low gate charge and low drain-source on-state resistance. The low gate charge means that, when the MOSFET is switched on, the current flow through the device is almost instantaneous, eliminating power losses due to charging the gate capacitance. The low drain-source on-state resistance ensures that the MOSFET has the maximum possible efficiency when compared to a conventional FET of the same size and capacitance.

In addition to its low on-state resistance, the IPL60R210P6AUMA1 also offers excellent switching performance. It can handle voltages up to 80V, a drain current of 6A, and a on-state resistance of 10 Ω. This makes it suitable for both low and high power applications. For example, it could be used in high power switching applications such as Uninterruptible Power Supplies (UPS) and industrial motor drives, as well as in battery-powered devices.

The IPL60R210P6AUMA1 is the ideal choice for designers who require a high performance, efficient solution. It can be used in a wide range of applications, from high power switching to low current logic circuits. With its low on-state resistance, fast switching, and wide operating temperature range, this MOSFET is a great choice for any power management application.

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