NVMFS5A140PLZWFT1G Allicdata Electronics

NVMFS5A140PLZWFT1G Discrete Semiconductor Products

Allicdata Part #:

NVMFS5A140PLZWFT1GOSTR-ND

Manufacturer Part#:

NVMFS5A140PLZWFT1G

Price: $ 1.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: -40V4.2MOHMSINGLE
More Detail: P-Channel 40V 20A (Ta), 140A (Tc) 3.8W (Ta), 200W ...
DataSheet: NVMFS5A140PLZWFT1G datasheetNVMFS5A140PLZWFT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 1.01430
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVMFS5A140PLZWFT1G is a Power MOSFET that belongs to the single category of FETs and MOSFETs transistors. The “WFT1G” part of its name stands for “Wide Form Factor," which indicates that it has a much wider body than its counterparts. Its dimensions are 1.97 mm x 1.5 mm and it has a 70 mΩ RDS(on).

The NVMFS5A140PLZWFT1G is commonly used in power applications such as converting DC/DC and step down converters where low power dissipation and a proper heat management system is crucial. It’s also very suitable for high voltage switching applications, particularly in battery pack design and power delivery. Because of its low on-state resistance, it’s extremely efficient and can handle a large current load.

The NVMFS5A140PLZWFT1G belongs to the single category of FETs and MOSFETs transistors. It is comprised of a single layer of gate oxide that allows it to be switched on and off with the application of voltage. The oxide layer isolates the gate from the channel, which prevents direct current leakage. The capacitor charge at the gate will not vary due to the isolation offered by the single layer of gate oxide. This makes the device more reliable and less prone to external interference.

The NVMFS5A140PLZWFT1G employs a number of features that make it suitable for power electronics applications. One such feature is known as the Avalanche Rugged Technology which ensures the “MOSFET ruggedness at steady-state and during transients by dissipating the charges built-up in the active cells. This means that even if it experiences transient events such as a surge or over-voltage, the device will not be damaged due to its Avalanche Rugged Technology.

The NVMFS5A140PLZWFT1G also has Low-Qg Dynamics, which eliminates the need for costly gate resistors and lowers the amount of power dissipation in the device. This, along with its low on-state resistance, makes the device highly efficient and ideal for power applications. It also has an Avalanche Soakback Diode, which prevents a secondary surge of reverse voltage by soaking up excess current. This means that even in the event of an overvoltage, the device will not be damaged.

Finally, the NVMFS5A140PLZWFT1G has a RoHS compliant package, making it suitable for use in medical and industrial applications. Furthermore, its industry-leading moisture sensitivity level (MSL) of 1.5 makes it highly reliable and long-lasting, even in damp environments.

Overall, the NVMFS5A140PLZWFT1G is an ideal choice for high voltage switching applications or power applications requiring efficient power dissipation and a reliable heat management system. With its Avalanche Rugged Technology, Low-Qg Dynamics, and RoHS compliant package, it is an incredibly reliable and efficient device.

The specific data is subject to PDF, and the above content is for reference

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