Allicdata Part #: | 1727-2588-2-ND |
Manufacturer Part#: |
PSMN010-80YLX |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V LFPAK56 |
More Detail: | N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFP... |
DataSheet: | PSMN010-80YLX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.27288 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 194W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6506pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44.2nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN010-80YLX is one of the most popular power MOSFETs used today. It is a single N-channel Enhancement Mode vertical Field Effect Transistor (FET). The PSMN010-80YLX can be found in a wide range of applications, such as automotive, lighting, and industrial applications, due to its power efficiency. The power MOSFET is specifically designed to provide exceptional thermal performance and esthetically pleasing characteristics. This makes it ideal for use in larger systems, such as utility-scale applications.
The PSMN010-80YLX is constructed from two diffusion grades of silicon: N-ype and P-type. This gives the transistor excellent reliability and a fast switching response time. The gate electrode is connected to the source region using a particular silicide technology, which enables the circuit to operate much faster than traditional MOSFETs. The P-type diffusions are typically based on a thicker and more highly doped layer than conventional structures, ensuring excellent surface stability.
The working principle of the PSMN010-80YLX is based on the majority carrier theory of electronics. When a voltage is supplied to the gate of the FET, majority carriers, namely electrons or holes, flow through the channel in the semiconductor substrate. The number of carriers varies with the amount of voltage supplied to the gate. If the gate voltage is high enough, the channel is fully activated, allowing the transistor to conduct electricity from the source to the drain. The drain current is therefore directly proportional to the gate voltage.
There are two operational states of the PSMN010-80YLX: the cut-off region and the saturation region. In the cut-off region, no electrons flow from the source to the drain, and the FET acts as an insulator. In the saturation region, the current conducting channel is fully “saturated”, allowing for maximum current flow. The cut-off and saturation regions are determined by the gate threshold voltage.
The PSMN010-80YLX offers many benefits over traditional MOSFETs. Its ability to operate at higher frequencies, faster switching speeds, and lower power consumption make it ideal for use in a wide range of applications. Furthermore, its power efficiency and ability to handle larger loads with less energy make it a great choice for applications in the automotive, lighting, and industrial sectors.
The specific data is subject to PDF, and the above content is for reference
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