Allicdata Part #: | NVMFS5C646NLAFT3G-ND |
Manufacturer Part#: |
NVMFS5C646NLAFT3G |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A 93A 5DFN |
More Detail: | N-Channel 60V 20A (Ta), 93A (Tc) 3.7W (Ta), 79W (T... |
DataSheet: | NVMFS5C646NLAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.27491 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2164pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.7nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 93A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NVMFS5C646NLAFT3G is a single-phased, small-signal Semiconductor Floorboard FET from N-Vecor Megatech. This Floorboard FET has been designed for a variety of electronic and electric applications — ranging from RF, analog, and high-frequency applications.
The NVMFS5C646NLAFT3G is based on the field-effect structure and uses a single gate to control the channel between source and drain which allows for much better performance than other discrete transistors.
The NVMFS5C646NLAFT3G includes a Negative Voltage MOSFET (NV-MOS), which is essentially an N-channel MOSFET that has a negative voltage applied to the gate. In an N-channel MOSFET, the gate voltage is positive and induces an inversion layer within the semiconductor substrate which allows current to flow between the source and drain, turning the transistor on. By using a negative gate voltage in an NV-MOS, the inversion layer is diminished and the transistor turns off. This makes the NV-MOS particularly suitable for use in high-frequency switching and other features that require fast switching times.
The NVMFS5C646NLAFT3G also includes an advanced feature called ‘floating gate FET switch’. This feature allows the user to quickly toggle the state of the transistor from on to off, or from off to on, by applying a simple voltage pulse to the gate. This feature helps reduce switching time, improve power efficiency, and improve overall system performance.
The NVMFS5C646NLAFT3G also offers C-V Characterization for high precision measurement of a FET’s characteristics to help reduce fabrication time and improve over all device performance. The FET also features a low leakage current with low threshold voltage that further increases device performance and makes it suitable for power sensitive applications.
Overall, the NVMFS5C646NLAFT3G is well suited to a variety of applications and its advanced features make it an ideal choice for RF, analog and high frequency applications. Its flexibility and superior performance make it a cost-effective solution for applications requiring fast switching times, low power consumption and high performance.
The specific data is subject to PDF, and the above content is for reference
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