STB28N60M2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	170W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1440pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	MDmesh™ II Plus
Rds On (Max) @ Id, Vgs:	150 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STB28N60M2 is a high power metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate in a range of frequencies with a voltage rating of 800V, offering low gate charge and high total current. This transistor is an enhancement type device, with an N-type body and a drain voltage minimum breakdown of up to 600V. The device utilizes a single, non-critical N-channel configuration for low gate charge, low gate-drain capacitance, flexible gate drive requirements, and low switching energy. The application field of STB28N60M2 includes power conversion and management, lighting, motor and heating control applications. The device is suitable for medium voltage applications such as DC/DC converters, AC/DC converters, HVAC, magnetic ballasts and medium voltage power supplies. In addition, this type of MOSFET is also used in DC-AC inverters, and in power switching applications.The working principle of STB28N60M2 is based on the properties of metal-oxide-semiconductor field-effect transistor (MOSFET). The device operates as a voltage controlled switch, where the voltage applied to the gate of the device controls the drain current flow. The device consists of a source, a drain and a gate terminal, which controls the device operation. When the gate voltage is increased, the drain current increases and the voltage across the device is reduced. When the gate voltage is reduced, the drain current is reduced, and the voltage across the device is increased. The structure of STB28N60M2 consists of an al ox-based insulation layer, which is sandwiched in between two layers of metal, usually consisting of either a polysilicon or a metal silicide layer. The innermost layer of polysilicon is connected to the gate terminal, while the outermost layer is connected to the source and drain terminals. The gate terminal voltage is used to control the drain current flow, and the drain current is limited by the gate-drain capacitance.The advantages of using STB28N60M2 include: excellent switching performance, high current handling capability, low gate charge, wide operating temperatures, and rugged construction. The device is optimized for low on-state resistance, which results in a lower power loss during operation. The device also has a low forward bias leakage, which helps to reduce energy consumption. Overall, the STB28N60M2 is a high-power metal-oxide-semiconductor field effect transistor perfect for use in power conversion and management, lighting, motor and heating control, DC-AC inverters, and medium voltage power supplies. The device utilizes an N-type body and a non-critical N-channel configuration, allowing for low gate charge, low gate-drain capacitance, flexible gate drive requirements, and low switching energy. With excellent switching performance and wide operating temperatures, this type of MOSFET is perfect for a variety of applications.

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