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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
BAS3005S02LRHE6 327XTSA1TR-ND	BAS3005S02LRHE6 327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 300A @ 30V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: -55C ~ 150C Base Part Number: BAS3005	1000 Order	15000+: $0.0625
IDB30E60ATMA1TR -ND	IDB30E60ATMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 126ns Current - Reverse Leakage @ Vr: 50A @ 600V Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40C ~ 175C	1000 Order	--
D400N16BXPSA1-N D	D400N16BXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 450A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 40mA @ 1600V Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Operating Temperature - Junction: -40C ~ 180C	1000 Order	1+: $0
DD171N14KHPSA1- ND	DD171N14KHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 171A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 20mA @ 1400V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	8+: $75.9171
DD242S08KHPSA1- ND	DD242S08KHPSA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
DD1200S45KL3B5N OSA1-ND	DD1200S45KL3B5N OSA1	Infineon Technologies	View more Part Status: Active Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500V Voltage - Forward (Vf) (Max) @ If: 3.1V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1500A @ 2800V Operating Temperature - Junction: -50C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
BAT6406WE6327HT SA1TR-ND	BAT6406WE6327HT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2A @ 30V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BAT64-06W	1000 Order	1+: $0
IRDCIP2003A-C-N D	IRDCIP2003A-C	Infineon Technologies	View more Part Status: Obsolete Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Voltage - Output: 1.3V Current - Output: 160A Voltage - Input: 5 V ~ 12 V Regulator Topology: Buck Frequency - Switching: 1MHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: iP2003A	1000 Order	1+: $0
IRDC3621-ND	IRDC3621	Infineon Technologies	View more Part Status: Obsolete Main Purpose: DC/DC, Step Down Outputs and Type: 2, Non-Isolated Voltage - Output: 1.8V, 2.5V Current - Output: 10A, 10A Voltage - Input: 5.5 V ~ 14.5 V Regulator Topology: Buck Frequency - Switching: 400kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: IR3621	1000 Order	1+: $0
IRFB7537PBF-ND	IRFB7537PBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 173A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150A Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	30000 Order	--
IPP023NE7N3GXKS A1-ND	IPP023NE7N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 273A Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1248 Order	1+: $4.0005 10+: $3.5708 100+: $2.9282 500+: $2.3712 1000+: $1.9998
IRFU5410PBF-ND	IRFU5410PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Power Dissipation (Max): 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1588 Order	--
IRGP4660DPBF-ND	IRGP4660DPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A Power - Max: 330W Switching Energy: 625J (on), 1.28mJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25C: 60ns/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 115ns Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	98 Order	--
IKQ40N120CT2XKS A1-ND	IKQ40N120CT2XKS A1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Power - Max: 500W Switching Energy: 3.1mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25C: 32ns/328ns Test Condition: 600V, 40A, 12 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	1000 Order	1+: $5.5944 10+: $5.052 100+: $4.1825 500+: $3.6421
AUIRGP50B60PD1E -ND	AUIRGP50B60PD1E	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Power - Max: 390W Switching Energy: 255J (on), 375J (off) Input Type: Standard Gate Charge: 205nC Td (on/off) @ 25C: 30ns/130ns Test Condition: 390V, 33A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	1000 Order	1+: $6.1803 10+: $5.585 100+: $4.624 500+: $4.0265
IPN50R800CEATMA 1TR-ND	IPN50R800CEATMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.5A, 13V Vgs(th) (Max) @ Id: 3.5V @ 130A Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Power Dissipation (Max): 5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	1000 Order	3000+: $0.1616
IRFS4229TRLPBFT R-ND	IRFS4229TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPB083N15N5LFAT MA1TR-ND	IPB083N15N5LFAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.9V @ 134A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $1.9403
IRL1004PBF-ND	IRL1004PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	32 Order	--
IRG4BC20UPBF-ND	IRG4BC20UPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 100J (on), 120J (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25C: 21ns/86ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	4 Order	--
BSS83PH6327XTSA 1TR-ND	BSS83PH6327XTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V Vgs(th) (Max) @ Id: 2V @ 80A Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
TT280N16SOFHPSA 1-ND	TT280N16SOFHPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 280A Current - On State (It (RMS)) (Max): 520A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz Current - Hold (Ih) (Max): 150mA Operating Temperature: -40C ~ 130C Mounting Type: Chassis Mount Package / Case: Module	9 Order	1+: $52.731 10+: $50.097
IRFHS9301TRPBFT R-ND	IRFHS9301TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	8000 Order	--
IPP60R180C7XKSA 1-ND	IPP60R180C7XKSA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 4V @ 260A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $2.1861 10+: $1.9744 100+: $1.5865 500+: $1.2339 1000+: $1.0224
IPD80R1K2P7ATMA 1TR-ND	IPD80R1K2P7ATMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 80A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPN95R1K2P7ATMA 1TR-ND	IPN95R1K2P7ATMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 478pF @ 400V Power Dissipation (Max): 7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	1000 Order	3000+: $0.339
IRG4PH50S-EPBF- ND	IRG4PH50S-EPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 57A Current - Collector Pulsed (Icm): 114A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Power - Max: 200W Switching Energy: 1.8mJ (on), 19.6mJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25C: 32ns/845ns Test Condition: 960V, 33A, 5 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	1000 Order	400+: $2.8257
IAUT300N10S5N01 5ATMA1TR-ND	IAUT300N10S5N01 5ATMA1	Infineon Technologies	View more Series: OptiMOS-5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 275A Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 16011pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	1000 Order	2000+: $2.3829
BSS7728NH6327XT SA2-ND	BSS7728NH6327XT SA2	Infineon Technologies	View more Series: Automotive, AEC-Q101, SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	12000+: $0.0355
IRL520NSTRLPBF- ND	IRL520NSTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRFB7440GPBF-ND	IRFB7440GPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRG4PC30KD-ND	IRG4PC30KD	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600J (on), 580J (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25C: 60ns/160ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
IRG4BC20SD-ND	IRG4BC20SD	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 19A Current - Collector Pulsed (Icm): 38A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Power - Max: 60W Switching Energy: 320J (on), 2.58mJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25C: 62ns/690ns Test Condition: 480V, 10A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	1000 Order	200+: $1.793
IRFBL3703-ND	IRFBL3703	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 76A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 209nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Mounting Type: Surface Mount Supplier Device Package: SUPER D2-PAK Package / Case: Super D2-Pak	1000 Order	1+: $0
IRFC2604B-ND	IRFC2604B	Infineon Technologies	View more Part Status: Obsolete Mounting Type: Surface Mount	1000 Order	1+: $0
IRF1010Z-ND	IRF1010Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRL1404LPBF-ND	IRL1404LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRF7353D2PBFTR- ND	IRF7353D2TRPBF	Infineon Technologies	View more Series: FETKY Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRLR2703PBF-ND	IRLR2703PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
BSP135L6327HTSA 1TR-ND	BSP135L6327HTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V Vgs(th) (Max) @ Id: 1V @ 94A Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0

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