
Allicdata Part #: | IRFHS9301TRPBFTR-ND |
Manufacturer Part#: |
IRFHS9301TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 6A PQFN |
More Detail: | P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface ... |
DataSheet: | ![]() |
Quantity: | 8000 |
Vgs(th) (Max) @ Id: | 2.4V @ 25µA |
Package / Case: | 6-PowerVDFN |
Supplier Device Package: | 6-PQFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 13A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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An RFHS9301TRPBF is a high voltage, N-channel enhancement mode MOSFET. It is capable of withstanding voltages up to +100V. The device has low gate charge and fast switching times, making it ideal for use in switching regulators, line drivers and other power switching applications. In this article we will discuss the application field and working principle of the RFHS9301TRPBF.
In terms of its application field, the RFHS9301TRPBF can be used in a variety of power switching applications. It can be used as a switch to control the flow of power to an electronic circuit. It is also ideal for use in high voltage DC-DC converters, as its high voltage rating makes it capable of handling up to +100V. Moreover, its low gate charge and fast switching times make it suitable for use in power efficient systems, such as circuit switching systems and automotive applications.
Now, we\'ll take a look at the working principle of the RFHS9301TRPBF. The device works by relying on the principle of electron mobility. When a positive voltage is applied to the Gate (G) terminal of the device, it causes the electrons at the device\'s source terminal to become more conductive, thus allowing current to flow from the drain terminal to the source terminal. Conversely, when the Gate voltage becomes zero or negative, the current flow is blocked and the device turns off.
The RFHS9301TRPBF is also equipped with a number of features that increase its usability. It is capable of withstanding extremely high temperatures, which means that it can be used in harsh environments. It also has an incredibly low on-resistance, allowing it to switch currents with very little power loss. Moreover, its small size makes it ideal for use in compact electronic circuits.
Overall, the RFHS9301TRPBF is a powerful, high voltage N-Channel MOSFET that is capable of withstanding voltages up to +100V. Its low gate charge, fast switching time and minimal power loss make it an ideal choice for use in power switching applications. From DC-DC converters and circuit switching applications to automotive applications, the RFHS9301TRPBF is a versatile device that is sure to enhance any project.
The specific data is subject to PDF, and the above content is for reference
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