IRFU5410PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	66W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	760pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	58nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	205 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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IRFU5410PBF is a P-channel power MOSFET produced by International Rectifier. It is a late generation technology Power MOSFET which is especially designed for power management applications that remain highly effective in controlling power, delivering greater efficiency and extended performance for increased power savings. The IRFU5410PBF is available in a TO-220AB package, and is matched for use with a microcontroller or similar device. Application Field
The IRFU5410PBF is ideally suited for applications such as load switching, hot-swap, DC-DC converters, motor control, and other power management applications. It is designed to operate efficiently in voltage ranges of up to 40V, providing outstanding power efficiency and improved performance. This makes it ideal for a variety of applications such as PWM controllers, digital control equipment, and more. The IRFU5410PBF also provides excellent noise immunity, which makes it perfect for designs with tight voltage margins. It is resistant to current surge up to 400A, which makes it suitable for applications where high power requirements are needed. The device provides superior device protection, thanks to the reinforced avalanche capability and the integrated dynamic dV/dt immunity. The TO-220AB package of the IRFU5410PBF provides easy mounting on heat sinks. This provides improved efficiency and extended protection from high temperatures, which helps to ensure the device\'s long-term reliability. The device also supports highly reliable electrical connections and is built with enhanced ESD protection, making it suitable for even the most demanding designs. Working Principle
The IRFU5410PBF is a P-channel power MOSFET which operates on the principle of negative temperature coefficient. It utilizes the P-type silicon semiconductor, which allows for the flow of electrons in a current-controlled manner. When operated at a certain voltage, the current through this device is determined by the voltage applied to the gate. The device is capable of switching very large currents in the range of 40V up to 400A. The power it can handle is astonishing, in the range of up to 9.6KW. The on-resistance of the device is low, allowing improved efficiency and power savings. This makes the IRFU5410PBF an ideal choice for applications which require very large currents and fast switching in a limited package size. The device is easily driven by a microcontroller or similar device, which provides for improved reliability, accuracy, and flexibility. It is also able to withstand high junction temperature, up to 150°C, which makes it suitable for extreme environmental conditions. In summary, the IRFU5410PBF is an ideal choice for applications which require large current operations, excellent noise immunity, and reliable operation in extreme environments. Its optimized package size and wide voltage range makes it suitable for a variety of designs. The device’s high power capability and excellent protection make it perfect for a wide range of applications.

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