IRL520NSTRLPBF Allicdata Electronics
Allicdata Part #:

IRL520NSTRLPBF-ND

Manufacturer Part#:

IRL520NSTRLPBF

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 10A D2PAK
More Detail: N-Channel 100V 10A (Tc) 3.8W (Ta), 48W (Tc) Surfac...
DataSheet: IRL520NSTRLPBF datasheetIRL520NSTRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.40000
10 +: $ 0.38800
100 +: $ 0.38000
1000 +: $ 0.37200
10000 +: $ 0.36000
Stock 1000Can Ship Immediately
$ 0.4
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRL520NSTRLPBF is the latest-generation enhancement-mode Silicon Gate Power Field Effect Transistor (FET). It is a dual power FET that features a verstatile range of operating modes, including a drain current of 25A (continuous) and a threshold voltage of 4V. Its characteristics make it ideally suited for a wide range of applications.

Uses and Applications

The IRL520NSTRLPBF is well-suited for a variety of applications. It has been used in power supplies, reverse polarity protection circuits, switch-mode power supplies (SMPS), DC-DC regulator circuits, motor controllers, and light dimmers. It is also used in power line switches, mobile equipment, and in telecom and medical equipment. Its compact size and high power-handling capabilities make it an excellent choice for many applications.

Working Principle

The IRL520NSTRLPBF works on the principle of field effect transistors. In these transistors, the current flow is controlled by a voltage applied to a “gate” electrode. The voltage applied to the gate controls the flow of current between the drain and source terminals of the transistor. When the gate voltage is increased, the current flow between the drain and the source increases. Conversely, when the gate voltage is decreased, the current flow decreases. The amount of current that flows between the drain and source is proportional to the voltage applied to the gate.

The IRL520NSTRLPBF is an enhancement-mode power FET, meaning that the gate voltage needs to be above the threshold voltage before the drain current begins to flow. Once the threshold voltage has been achieved, the current flow between the drain and source can be controlled by adjusting the gate voltage.

Conclusion

The IRL520NSTRLPBF is a powerful, versatile, and energy-efficient Dual Power FET. Its wide range of operating modes and high current-carrying capacity make it an ideal choice for a variety of applications, from power supplies to reverse polarity protection circuits. Its working principle is based on field effect transistors and it operates in an enhancement-mode, meaning that the gate voltage needs to be higher than the threshold voltage before current begins to flow.

The specific data is subject to PDF, and the above content is for reference

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