IRF7353D2TRPBF

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The IRF7353D2TRPBF is a high-performance, single N-channel enhancement-mode Vertical Field-Effect Transistor (VFET). It is designed for high-performance, low-power applications requiring superior switching speed characteristics, high breakdown voltage and excellent current handling capability.

The IRF7353D2TRPBF is well-suited for low voltage and high current applications such as motor control, audio power amplifiers and power conversion applications. The device features a gate-to-drain breakdown voltage of 700 V and a current rating of 5.2 A. It has an industry-standard SO-8 package and is available in a Pb-Free (RoHS compliant) version.

The IRF7353D2TRPBF is a low-voltage, high-current switch designed to support high-performance, high-speed, low-power applications. It has an operating voltage range from -3V to 80V and a current handling capability of up to 5.2 A.

The device is constructed using advanced MOSFET process technology and features a built-in diode for transient protection. This diode provides protection versus overvoltage, undervoltage and reverse bias conditions. The built-in blocking-diode also prevents potential unintentional conduction. The device also features a P-substrate which minimizes RDS(ON) and reduces thermal resistance.

The IRF7353D2TRPBF is designed to provide high-speed switching and low-power operation. Its low on-resistance, high-current handling capability and integrated body diode make it suitable for use in low-voltage, high-current applications such as motor control, audio power amplifiers and power conversion applications.

The device is designed to handle up to 5.2 A of continuous DC current and feature gate charge-bandwidth (Qg) of 41nC. This reduces turn-off times and improves efficiency. The device is also capable of operating at high frequencies making it suitable for switching applications.

The IRF7353D2TRPBF is rated for breakdown voltages up to 700 V, features low gate-charge (Qg), a low gate to drain leakage (Leakage) and high efficiency. The low gate charge allows the device to operate at high frequencies while the low gate to drain leakage improves efficiency and prevents excessive power dissipation. Additionally, the high breakdown voltage makes the device suitable for use in high-voltage applications.

The IRF7353D2TRPBF is constructed using advanced MOSFET process technology and features a built-in diode for transient protection. This diode provides protection against overvoltage, undervoltage and reverse bias conditions. Additionally, the device features a P-substrate which minimizes RDS(ON) and reduces thermal resistance.

Overall, the IRF7353D2TRPBF is a high-performance, single N-channel enhancement-mode Vertical Field-Effect Transistor (VFET) designed for low voltage and high current applications such as motor control, audio power amplifiers and power conversion applications. It has an operating voltage range from -3V to 80V, a current handling capability of up to 5.2 A, a gate-to-drain breakdown voltage of 700 V, and an industry-standard SO-8 package. It features a low gate charge, low gate to drain leakage and high breakdown voltage making it suitable for use in high-performance and high-speed, low-power applications.

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