IRL1004PBF Allicdata Electronics
Allicdata Part #:

IRL1004PBF-ND

Manufacturer Part#:

IRL1004PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 130A TO-220AB
More Detail: N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IRL1004PBF datasheetIRL1004PBF Datasheet/PDF
Quantity: 32
Stock 32Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRL1004PBF, categorized under Transistors - FETs, MOSFETs - Single, is a fast and low voltage, logic level, N-channel MOSFET. It provides excellent temperature and power handling.

The IRL1004PBF features a single N-channel, 30V and 12A with excellent avalanche energy rating (EAS). This device is manufactured with a low density cell and low typical on-state resistance (RDS(ON)), which makes it capable of driving and switching up to 12A of current.

This is a high speed device with a very low gate threshold voltage (Vgs(th)). It has a very low maximum gate charge and the reverse body diode has extremely low tail current. The device is capable to sustain a gate voltage up to over 60V and has an avalanche capability of over 20A at less than 25°C.

In addition, the IRL1004PBF has an outstanding power density, which makes it suitable for applications that require higher power density and faster switching when compared to other MOSFETs. The device also reduces power losses in the system thanks to its low on-state resistance and low operational temperature.

IRL1004PBF is ideal for applications such as switching power supplies, dc/dc converters, battery packs, regulated power supplies, motor drives, consumer electronics, charging systems, control relays, and portable equipment.

The device\'s working principle is based on the drain current being controlled by the gate-source voltage. When the gate voltage is higher than the source voltage, the channel is open and drain current flows through the device. This current then passes through the load and returns to the source.

When the gate voltage is less than the source voltage, the channel closes and the drain current ceases. This avalanche rating allows the device to handle sudden voltage or current changes, making it suitable for high-reliability and high-temperature applications.

The IRL1004PBF has a very good on-resistance (RDS(on)) and a fast switching speed, allowing it to reduce EMI and RFI noise in the system. The design also features a lower leakage current, low thermal resistance, and a low gate charge.

IRL1004PBF is an economical solution for applications requiring low gate charge and low gate voltage, thus minimizing power consumption and extending battery life. This device is capable of withstanding high temperature as well as high voltage, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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