IRFBL3703 Allicdata Electronics
Allicdata Part #:

IRFBL3703-ND

Manufacturer Part#:

IRFBL3703

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 260A SUPER D2PAK
More Detail: N-Channel 30V 260A (Tc) 3.8W (Ta), 300W (Tc) Surfa...
DataSheet: IRFBL3703 datasheetIRFBL3703 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: Super D2-Pak
Supplier Device Package: SUPER D2-PAK
Mounting Type: Surface Mount
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 209nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 76A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFBL3703 is a N-MOSFET type transistor, which features an exceptionally low on-resistance of 37mOhms. It is a high power, low operating voltage device, suitable for a wide range of applications. Due to its low on-resistance, it can be used in pulsed and continuous power applications where very high currents are necessary, such as motor drives, DC-DC converters, and power regulators. It can also be used in audio and RF power applications, as well as in switching and power control applications.

The IRFBL3703 is a single N-channel device, meaning that it can carry very high currents in a single direction. The transistor consists of a source, drain and gate, with the drain being the load carrying element, the source providing the current, and the gate selectively turning the device on and off. When the gate is \'on\', the drain and source are connected, allowing current to flow between the terminals. When the gate is \'off\', no current is allowed to flow, and the device is said to be in the \'off-state\'.

The working principle of the IRFBL3703 is very straightforward. When the gate voltage is applied, the current flows between the drain and source, allowing the load to be controlled. The device acts as a switch and regulator, allowing for fast switching times and greater power control than conventional devices. The drain-to-source impedance is extremely low, allowing for very efficient and rapid switching operations.

The IRFBL3703 has a wide range of applications, including motor drive, DC-DC converters, power regulators, audio and RF power applications, power control, and switching. It is suitable for applications that require high switching speeds, high load currents, and low on-resistance. Due to its low on-resistance, it can be used in low voltage applications, allowing it to be used in battery powered applications. It is also suitable for use in high-end audio amplifiers, thanks to its low on-resistance.

The IRFBL3703 is an extremely versatile N-MOSFET type transistor, with an exceptionally low on-resistance. It is capable of efficiently controlling very high currents, making it suitable for a wide range of applications. Its low on-resistance also makes it ideal for use in battery powered applications, as well as audio and RF power applications. Due to its versatility and simplicity, the IRFBL3703 is a reliable, cost effective solution for many power applications.

The specific data is subject to PDF, and the above content is for reference

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