BSS83PH6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSS83PH6327XTSA1TR-ND |
Manufacturer Part#: |
BSS83PH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 0.33A SOT23 |
More Detail: | P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS83PH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 330mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 330mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.57nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 78pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS83PH6327XTSA1 transistor is a single MOSFET that is part of a wide range of Transistors, FETs, and MOSFETs. It is typically used in high-power, high current applications and is suitable for general purpose applications requiring fast switching of power or signals. The BSS83PH6327XTSA1 transistor is ideal for use in high-current, high-temperature, and low-voltage applications, as it offers low on-resistance, low gate-threshold voltage, and fast switching speed. It also features an integrated temperature sensor, which can be used to monitor the temperature of the device.
The BSS83PH6327XTSA1 transistor can be used for both analog and digital functions, depending on the application. In analog applications, it is used for amplifying and switching signals, as well as for power management. In digital applications, it is used for driving data signals from logic and microcontroller. The BSS83PH6327XTSA1 transistor has high power capabilities and can be used to drive high current loads with accuracy, as well as high-speed switching.
The working principle of the BSS83PH6327XTSA1 transistor is based on the field-effect transistor (FET). FETs are transistors that are constructed using doped semiconductor materials and metal layers. The BSS83PH6327XTSA1 transistor has a metal-oxide-semiconductor field-effect transistor (MOSFET) design and utilizes an insulated-gate structure, which helps to minimize leakage current and prevent undesired parasitic currents. Additionally, the MOSFET design helps to minimize the gate threshold voltage, which helps to reduce the switching speed.
The BSS83PH6327XTSA1 transistor can be found in a variety of applications, including automotive systems, power supplies, communication systems, industrial applications, and consumer electronic devices. In addition, it is used in applications that require fast switching, low on-resistance, low gate-threshold voltage, and low power consumption. Additionally, the integrated temperature sensor makes the device ideal for applications that need to monitor the temperature of the device, for example, power supplies and communications systems.
In conclusion, the BSS83PH6327XTSA1 transistor is an efficient and durable single MOSFET that can be used in many applications, ranging from analog to digital. It offers low on-resistance, low gate-threshold voltage, and fast switching speed, making it suitable for high-power, high-current applications. Additionally, the integrated temperature sensor makes it suitable for monitoring the temperature of the device, for example, power supplies and communications systems.
The specific data is subject to PDF, and the above content is for reference
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