IRF1010Z

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The IRF1010Z is a series of N-channel Power Mosfet (Metal Oxide Semiconductor Field Effect Transistor) produced by International Rectifier Corporation. It is a single discrete device, capable of switching high power loads and operating at temperatures up to 125ºC.

This power mosfet features an extremely low on resistance, a wide safe operating area and a low gate charge. This makes it ideal for a variety of applications, such as switching power supplies, and high power bipolar audio amplifiers, as well as industrial and telecom applications. In addition, it is also suitable for low frequency, high load switching applications.

The IRF1010Z has a Drain to Source Breakdown Voltage (BVDSS) rating of 10V, and a Maximum Drain Current (Id) of 28A. It also has a very low on resistance of 0.025 Ohms at a gate voltage of 10V. It also has a Drain to Source On Voltage (VDSS) of 0.82V, and a Maximum power dissipation of 125 Watts.

The working principle of the IRF1010Z is based on the basic FET function. FETs often act as voltage controlled variable resistors, that is the resistance between the source and drain terminals is controlled by the gate voltage. The greater the gate voltage, the lower the resistance. The maximum drain current is determined by the maximum gate voltage.

In the case of the IRF1010Z, the drain current is limited by the Maximum Drain Current (Id) rating. This means that if the gate voltage is larger than the BVDSS rating, the drain current is limited to the maximum allowable drain current. When the gate voltage is below the BVDSS rating, the drain current is limited by the RDS(on) rating.

The FET’s intrinsic gain is determined by the RDS(on) rating and the Gate-Source capacitance (CGS). The higher the RDS(on) value, the higher the gain of the device. The CGS is an important factor in determining the switching speed of the device. The higher the CGS value, the slower the device will switch.

The IRF1010Z is a highly versatile device, capable of being used in a wide range of applications. Its low on resistance and versatile features make it ideal for high power switching applications, as well as for low frequency, high load switching applications in industrial and telecom systems. It is also suitable for use in switching power supplies, audio amplifiers, and other applications requiring fast switching and high efficiency.

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