IPB083N15N5LFATMA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB083N15N5LFATMA1 is a commonly used P-channel metal oxide semiconductor field effect transistor (MOSFET). This device is capable of providing a majority of power switches that are used in many consumer electronics, automotive, medical, and industrial applications.

The device is a single P-channel power MOSFET that is manufactured with advanced low-voltage process technology. This device contains an integral flip-chip Schottky diode and an integrated level shift in the package to reduce the drain-to-source voltage requirements during switching. This MOSFET is designed for switching applications in consumer electronics, automotive, industrial and other applications.

The device is extremely efficient because it is able to switch efficiently at low-voltage supply, reduces power-loss, and prolongs battery life. The MOSFET has a maximum voltage rating of 17 V, and a maximum drain current of 83A. It has a maximum power dissipation rating of 130 W and a threshold voltage of -1.5 V.

The device’s working principle is based on the electrostatic field effect principle of semiconductor devices. The operation of a MOSFET relies on the presence of an electric field to produce the required level of conduction and to switch the device. The operation of a P-channel MOSFET is dependent on a voltage applied to its gate terminal. When a negative voltage is applied to the gate terminal, it forms an electric field that controls the current flow between the drain and source. This electric field is inversely proportional to the voltage applied over the gate-drain and gate-source oxide layers. When the gate voltage reaches the certain value, the MOSFET becomes saturated and the current starts to flow from the drain to the source. As the voltage applied to the gate terminal increases, the electric field increases and the current flow between the drain and source increases.

The IPB083N15N5LFATMA1 can be used for various kinds of switching applications such as switching power for motor drives, DC-DC converters, Gate drives, low voltage motor-control, and load-switching. This MOSFET also offers push-pull output and high-side switching, making it suitable for many applications. The device also offers protection against transient spikes and other over-current protection features.

The IPB083N15N5LFATMA1 is a highly efficient and reliable P-channel power MOSFET suitable for powering a variety of applications in consumer electronic, automotive, medical, and industrial industries. The device is easy to use and understand since it is based on the electrostatic field effect principle of semiconductor devices. The device has a number of features such as low-voltage process technology, flip-chip Schottky diode, level shift, maximum voltage rating of 17 V, maximum drain current of 83A, and a maximum power dissipation rating of 130 W. This device is ideal for applications that require efficient and reliable power switching.

The specific data is subject to PDF, and the above content is for reference