IRL1404LPBF

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4 mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.3V, 10V
Current - Continuous Drain (Id) @ 25°C:	160A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction to IRL1404LPBF

The IRL1404LPBF is an insulated gate mosfet device manufactured by International Rectifier designed to work in various applications. It is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is suitable for power amplifier circuits. It has a rated voltage of 600 volts and is available in a leadless Pb-free package.

IRL1404LPBF Application Field

The IRL1404LPBF is suitable for a variety of power amplifiers and power supply circuits, as well as motor drivers and other similar circuits. It is especially suitable for applications that require high currents, as it has a low on-resistance of 4mΩ. This makes it highly capable of driving heavy loads with a low voltage and current drop. The device is also capable of withstanding high voltages and producing low output noise.

IRL1404LPBF Working Principle

The IRL1404LPBF operates on the principle of a metal-oxide-semiconductor field-effect transistor. It works by controlling the flow of electrons across an insulated gate which affects the job of the other current-carrying terminals. When the gate terminal is at a negative bias, it creates a slight depletion layer around the source and drain terminals. This acts as an isolator and prevents electrons from flowing across them. When the voltage applied to the gate terminal is above the threshold voltage, a channel is formed between the source and drain. This allows the electrons to pass through, which lets current flow across the device. The device has various characteristics, like a high on-resistance, which can affect the performance of the device.

Conclusion

The IRL1404LPBF is a MOSFET device that comes in a leadless Pb-free package. It is suitable for power amplifiers and power supply circuits, motor drivers and other similar applications. It works by controlling the flow of electrons across an insulated gate, which creates a slight depletion layer around the source and drain terminals. When the voltage is applied to the gate terminal that exceeds the threshold value, the channel is formed between the source and drain which allows current to flow.

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