Optocoupler board 4 channel - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IXFH80N65X2-4-N D	IXFH80N65X2-4	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V Power Dissipation (Max): 890W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1000 Order	30+: $7.3668
IXFH60N65X2-4-N D	IXFH60N65X2-4	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1000 Order	30+: $5.9409
STW70N60M2-4-ND	STW70N60M2-4	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 100V Power Dissipation (Max): 450W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	600+: $5.5026
STW40N60M2-4-ND	STW40N60M2-4	STMicroelectronics	View more Series: MDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	600+: $3.1129
497-15373-5-ND	STW56N65M2-4	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 62 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V Power Dissipation (Max): 358W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	561 Order	--
497-16334-5-ND	STW88N65M5-4	STMicroelectronics	View more Series: MDmesh M5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 29 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V Power Dissipation (Max): 450W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	549 Order	1+: $12.4614 30+: $10.4813 120+: $9.6315
497-15448-5-ND	STW48N60M2-4	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3060pF @ 100V Power Dissipation (Max): 300W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	1000 Order	--
497-14039-5-ND	STW69N65M5-4	STMicroelectronics	View more Series: MDmesh V Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V Power Dissipation (Max): 330W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	467 Order	1+: $13.6773 10+: $12.4324 100+: $10.5676
497-13667-5-ND	STW57N65M5-4	STMicroelectronics	View more Series: MDmesh V Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	44 Order	--
497-18042-ND	STW38N65M5-4	STMicroelectronics	View more Series: MDmesh M5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	100 Order	1+: $5.2542 30+: $4.3071 120+: $3.887 510+: $3.2566 1020+: $2.8364
497-15578-5-ND	STW56N60M2-4	STMicroelectronics	View more Series: MDmesh M2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V Power Dissipation (Max): 350W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	247 Order	1+: $5.6637 30+: $4.6429 120+: $4.1899 510+: $3.5104 1020+: $3.0575
1727-7624-2-ND	PMCM4401UNEZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Power Dissipation (Max): 400mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (2x2) Package / Case: 4-XFBGA, WLCSP	9000 Order	9000+: $0.0801
1727-7627-2-ND	PMCM6501UPEZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 4.5V Power Dissipation (Max): 556mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (2x2) Package / Case: 4-XFBGA, WLCSP	4500 Order	4500+: $0.1615
1727-7625-2-ND	PMCM4402UPEZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Power Dissipation (Max): 400mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (2x2) Package / Case: 4-XFBGA, WLCSP	9000 Order	9000+: $0.0801
SISC050N10DX1SA 1-ND	SISC050N10DX1SA 1	Infineon Technologies	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	150640+: $0.1771
IRFD9123-ND	IRFD9123	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Mounting Type: Through Hole Supplier Device Package: 4-HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	--
PMCM440VNE/S500 Z-ND	PMCM440VNE/S500 Z	Nexperia USA Inc.	View more Series: TrenchMOS Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 67 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 6V Power Dissipation (Max): 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (0.78x0.78) Package / Case: 4-XFBGA, WLCSP	1000 Order	1+: $0
568-13302-2-ND	PMCM4401UPEZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (0.78x0.78) Package / Case: 4-XFBGA, WLCSP	9000 Order	9000+: $0.1259
IXFD26N50Q-72-N D	IXFD26N50Q-72	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD23N60Q-72-N D	IXFD23N60Q-72	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD80N20Q-8XQ- ND	IXFD80N20Q-8XQ	IXYS	View more Series: HiPerFET Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Operating Temperature: 150C (TJ) Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD14N100-8X-N D	IXFD14N100-8X	IXYS	View more Series: HiPerFET Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD40N30Q-72-N D	IXFD40N30Q-72	IXYS	View more Series: HiPerFET Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
IXFD80N10Q-8XQ- ND	IXFD80N10Q-8XQ	IXYS	View more Series: HiPerFET Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Operating Temperature: 150C (TJ) Supplier Device Package: Die Package / Case: Die	1000 Order	1+: $0
SI8473EDB-T1-E1 TR-ND	SI8473EDB-T1-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Vgs (Max): 12V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	1000 Order	3000+: $0.1849
SI8475EDB-T1-E1 TR-ND	SI8475EDB-T1-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Vgs (Max): 12V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	1000 Order	3000+: $0.1907
IRFD9123PBF-ND	IRFD9123PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Mounting Type: Through Hole Supplier Device Package: 4-HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	1+: $0
342-1091-ND	HTNFET-T		View more Series: HTMOS Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V Power Dissipation (Max): 50W (Tj) Operating Temperature: -55C ~ 225C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-Power Tab Package / Case: 4-SIP	3 Order	1+: $303.206 10+: $291.974
IRFD9113-ND	IRFD9113	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 300mA, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	--
IRFD213-ND	IRFD213	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	--
SQD40030E_GE3TR -ND	SQD40030E_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Drive Voltage (Max Rds On, Min Rds On): 10V Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.4747
PSMN1R0-40ULDX- ND	PSMN1R0-40ULDX	Nexperia USA Inc.	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 280A Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V Power Dissipation (Max): 164W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	1000 Order	1500+: $0.7564
PSMN5R6-100YSFX -ND	PSMN5R6-100YSFX	Nexperia USA Inc.	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 158A Drive Voltage (Max Rds On, Min Rds On): 10V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Power Dissipation (Max): 294W Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	1000 Order	1500+: $0.6723
HAF1002-90STL-E -ND	HAF1002-90STL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Vgs (Max): +3V, -16V Power Dissipation (Max): 50W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	1000 Order	1+: $0
AOTF4N90_002-ND	AOTF4N90_002	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0
AOTF12N50_007-N D	AOTF12N50_007	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0
AOTF8N50_003-ND	AOTF8N50_003	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0
AOTF7N60_002-ND	AOTF7N60_002	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0
AOTF5N50FD_001- ND	AOTF5N50FD_001	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0
AOTF12N50_001-N D	AOTF12N50_001	Alpha & Omega Semiconductor Inc.	View more Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide)	1000 Order	1+: $0

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