PSMN1R0-40ULDX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PSMN1R0-40ULDX is a N-channel Power MOSFET which is specially designed for power switching applications. Its main feature is that it is capable of delivering a very fast switching performance which maximizes the efficiency of the device. The device is suitable for any kind of switched or DC/DC conversion circuit and also for pulse-width-modulated (PWM) circuits.

The PSMN1R0-40ULDX is an N-channel enhancement mode MOSFET which is commonly called a ‘Shingled Gate’ MOSFET. It has a single uniform structure, with a layer of dielectric material between the gate and drain region. This allows the device to switch on and off in a very short period of time. The device has very low on-state resistance and a wide range of drain-source drain breakdown voltages.

The PSMN1R0-40ULDX has a low voltage drop and low gate threshold voltage, making it suitable for switching applications with very low voltage devices. The device also has a high forward transconductance (GMM) which allows it to switch rapidly without dissipating much power.

The operating principle of the PSMN1R0-40ULDX is very simple. When the gate voltage is zero, the device is off and no current flows. As the gate voltage is increased, the device begins to conduct, with the amount of current passing through the device determined by the drain-source voltage. As the voltage rises, more current passes through the device and the device begins to saturate.

The PSMN1R0-40ULDX is mainly used in power switching applications such as DC/DC converters, power supply switches, power management circuits and high-side switches. The device is also suitable for high-frequency switching applications, such as motor driver circuits, power converters and other digital logic circuits. The device has a wide range of operating temperatures and can work reliably in harsh environments.

In conclusion, the PSMN1R0-40ULDX is a compact, high-speed Power MOSFET which is suitable for many different applications. Its fast switching performance and low on-state resistance make it an ideal choice for power switching and high-frequency switching applications. The device is also robust and reliable, making it a reliable choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference