IRFD9123PBF Allicdata Electronics
Allicdata Part #:

IRFD9123PBF-ND

Manufacturer Part#:

IRFD9123PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 1A HEXDIP
More Detail: P-Channel 100V 1A (Ta) Through Hole 4-HVMDIP
DataSheet: IRFD9123PBF datasheetIRFD9123PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-HVMDIP
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFD9123PBF is a special type of transistor known as an N-channel Enhancement-mode Vertical D-MOS Field Effect Transistor (FET). As with many other FETs, it is designed to amplify electronic signals, acting like an electronic switch. It is often used in applications such as automotive and computer power supplies, instrumentation, and telecoms.The IRFD9123PBF has a maximum drain current of 4A, with a drain source voltage that ranges from 40V to 100V. It has a maximum on-state resistance of 0.113 Ω and a maximum gate–source voltage of ±20V. The maximum power dissipation of the device is 8.5W, and the junction temperature can range from -55°C to +150°C.A Field Effect Transistor works by using an electric field to control the conductivity of the transistor channel. This electric field is generated when a voltage is applied to the transistor\'s gate pin. When the voltage is increased beyond a certain threshold, the electric field causes the transistor to turn on, allowing the current to flow between the drain and source pins. The amount of current flowing through the transistor can also be controlled by adjusting the voltage applied to the gate.The IRFD9123PBF is an enhancement-mode FET. This means that, when a gate-source voltage is applied, the transistor turns on. The amount of current flowing through the device can be adjusted by increasing or decreasing the gate voltage. This allows the device to be used as an adjustable current switch, making it perfect for applications such as motor speed control and DC-DC converters.The IRFD9123PBF also has several safety features which make it ideal for use in higher power applications. It has a thermal shutdown protection circuit which limits the drain-source voltage and averts thermal overload. The device also has a latch-up protection circuit which keeps the device from being damaged by excessive gate-source voltage.Overall, the IRFD9123PBF is a great choice for applications that require and adjustable current switch, such as motor speed control and DC-DC converters. Its safety features make it ideal for use in higher power applications, and its temperature and drain-source maximums make it able to be used in a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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