
Allicdata Part #: | IRFD9123PBF-ND |
Manufacturer Part#: |
IRFD9123PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 1A HEXDIP |
More Detail: | P-Channel 100V 1A (Ta) Through Hole 4-HVMDIP |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 600mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFD9123PBF is a special type of transistor known as an N-channel Enhancement-mode Vertical D-MOS Field Effect Transistor (FET). As with many other FETs, it is designed to amplify electronic signals, acting like an electronic switch. It is often used in applications such as automotive and computer power supplies, instrumentation, and telecoms.The IRFD9123PBF has a maximum drain current of 4A, with a drain source voltage that ranges from 40V to 100V. It has a maximum on-state resistance of 0.113 Ω and a maximum gate–source voltage of ±20V. The maximum power dissipation of the device is 8.5W, and the junction temperature can range from -55°C to +150°C.A Field Effect Transistor works by using an electric field to control the conductivity of the transistor channel. This electric field is generated when a voltage is applied to the transistor\'s gate pin. When the voltage is increased beyond a certain threshold, the electric field causes the transistor to turn on, allowing the current to flow between the drain and source pins. The amount of current flowing through the transistor can also be controlled by adjusting the voltage applied to the gate.The IRFD9123PBF is an enhancement-mode FET. This means that, when a gate-source voltage is applied, the transistor turns on. The amount of current flowing through the device can be adjusted by increasing or decreasing the gate voltage. This allows the device to be used as an adjustable current switch, making it perfect for applications such as motor speed control and DC-DC converters.The IRFD9123PBF also has several safety features which make it ideal for use in higher power applications. It has a thermal shutdown protection circuit which limits the drain-source voltage and averts thermal overload. The device also has a latch-up protection circuit which keeps the device from being damaged by excessive gate-source voltage.Overall, the IRFD9123PBF is a great choice for applications that require and adjustable current switch, such as motor speed control and DC-DC converters. Its safety features make it ideal for use in higher power applications, and its temperature and drain-source maximums make it able to be used in a variety of different applications.
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