| Allicdata Part #: | 497-18042-ND |
| Manufacturer Part#: |
STW38N65M5-4 |
| Price: | $ 5.78 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 30A TO247-4L |
| More Detail: | N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-... |
| DataSheet: | STW38N65M5-4 Datasheet/PDF |
| Quantity: | 100 |
| 1 +: | $ 5.25420 |
| 30 +: | $ 4.30710 |
| 120 +: | $ 3.88695 |
| 510 +: | $ 3.25663 |
| 1020 +: | $ 2.83642 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-4 |
| Supplier Device Package: | TO-247-4L |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
| Series: | MDmesh™ M5 |
| Rds On (Max) @ Id, Vgs: | 95 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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。The STW38N65M5-4 is a high voltage, low masterstrip N-Channel MOSFET produced by Infineon Technologies. It is especially suitable for switching and amplifying radio frequency signals from 1.0 GHz to 8.0 GHz, and is ideal for use in broadband wireless applications such as wireless local loop and wireless network service access.
This particular device is a single transistor, meaning that it consists of one channel that acts as a current and voltage amplifier. Its power efficiency makes it an excellent choice for use in high frequency and high-power switching applications. Its breakdown voltage of 38 V gives it the ability to handle higher voltages than other MOSFETs. Its drain-source voltage is rated at 65 V and its maximum drain current is 75 A. Its power dissipation is also very low, allowing it to work even at high temperatures.
The STW38N65M5-4 is capable of switching signals between 1.0 and 8.0 GHz and has a low Vds max value of 65 V. This makes it an excellent choice for use in RF circuits, as it can provide the necessary amplification and low noise level required for these types of applications. It is also very versatile, and can be used for a variety of applications such as switching in digital systems, amplifying radio frequency signals, and providing power on-off control.
The STW38N65M5-4 works by utilizing the principle of MOSFETs, which are Metal-Oxide-Semiconductor Field-Effect Transistors. As the name implies, MOSFETs use a metal gate to control the amount of current flowing through a semiconductor channel. This is done by controlling the voltage applied to the gate of the transistor, resulting in the transistor turning on and off in response. When the voltage applied to the gate is not at the correct level, the transistor will not switch.
When the gate voltage is applied, the transistor turns on and allows current to flow between the gate and the drain. This allows the transistor to be used to vary the amount of current flowing in an electrical circuit, which is its main application. This can be used to control the amount of current passing through various components, as well as powering and controlling devices in a circuit.
In conclusion, the STW38N65M5-4 is an excellent choice for a wide range of high frequency applications. Its high voltage and low power dissipation make it a suitable choice for many RF applications, while its ability to be used for a variety of switching and amplifying operations make it highly versatile. Its low Vds max value makes it ideal for use in digital systems and provides excellent power control. With its excellent performance specifications, the STW38N65M5-4 is an excellent choice for high frequency and high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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STW38N65M5-4 Datasheet/PDF