IRFD213 Allicdata Electronics
Allicdata Part #:

IRFD213-ND

Manufacturer Part#:

IRFD213

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 450MA 4-DIP
More Detail: N-Channel 250V 450mA (Ta) Through Hole 4-DIP, Hex...
DataSheet: IRFD213 datasheetIRFD213 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFD213 is a single FET type transistor, which is preferential to many users. It is popularly used in commercial, industrial and ethnic applications due to its wide range of applications.

The IRFD213 is specially designed for switching applications, where low drain-source capacitance and low gate-source capacitance are the most important features. It has the latest features enabling efficient and reliable operation in networks like switched power supplies, converters and adapters. The FET transistor is also often deployed in high frequency applications with low input capacitance and low gate-source capacitance.

The IRFD213 has various features that make it suitable for a wide range of applications. It has an extended power range of approximately 10V to 35V. It has ample power handling capability and very low leakage current, making it suitable for high frequency applications with reliable operation. The FET also has a fast turn-off time compared to bipolar transistors, hence it is preferred in many switching applications. Its low gate-source capacitance makes it suitable for use in high frequency switching applications.

The working principle of the IRFD213 FET transistor is quite simple. Electricity is passed through the source and the drain terminals of the FET in order to control the flow of current between them. The FET is typically operated in a depletion mode; meaning whenever a gate voltage is applied to the gate terminal, the current passing through the FET turns off. On the other hand, when no gate voltage is applied, the current passing through the FET remains on. This is the working principle of the IRFD213 FET transistor.

In terms of its various application fields, the IRFD213 is used in a wide range of applications. It is extensively used in power supplies and electronic switching applications like switches, level shifters, voltage regulators, amplifiers, and transmitters. The IRFD213 also works great in high frequency applications, as it has low gate-source capacitance. In addition, the FET transistor is preferred in switching applications due to its fast turn-off time, which helps in reducing the power consumption in an electrical circuit.

Other applications of IRFD213 FET transistors are switch mode power supplies, choppers, motor drivers, circuits with low input capacitance, etc. The FET can also be employed in analog applications like amplifiers and oscillators.

The IRFD213 is a single FET type transistor that is popularly used in commercial, industrial and ethnic applications. It is specially designed for switching applications, where low drain-source capacitance and low gate-source capacitance are the most important features. It has a wide range of applications, including power supplies, electronic switching applications, amplifiers, transmitters, choppers, motor controllers, and many more. The IRFD213 works on the principle of passing electricity through the source and the drain terminals of the FET in order to control the flow of current between them. The FET transistor is operated in depletion mode, meaning whenever a gate voltage is applied to the gate terminal, the current passing through the FET turns off. It is preferred in many switching applications due to its fast turn-off time, low input capacitance, and low gate-source capacitance.

The specific data is subject to PDF, and the above content is for reference

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