| Allicdata Part #: | IRFD213-ND |
| Manufacturer Part#: |
IRFD213 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 450MA 4-DIP |
| More Detail: | N-Channel 250V 450mA (Ta) Through Hole 4-DIP, Hex... |
| DataSheet: | IRFD213 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 4-DIP (0.300", 7.62mm) |
| Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 270mA, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 450mA (Ta) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRFD213 is a single FET type transistor, which is preferential to many users. It is popularly used in commercial, industrial and ethnic applications due to its wide range of applications.
The IRFD213 is specially designed for switching applications, where low drain-source capacitance and low gate-source capacitance are the most important features. It has the latest features enabling efficient and reliable operation in networks like switched power supplies, converters and adapters. The FET transistor is also often deployed in high frequency applications with low input capacitance and low gate-source capacitance.
The IRFD213 has various features that make it suitable for a wide range of applications. It has an extended power range of approximately 10V to 35V. It has ample power handling capability and very low leakage current, making it suitable for high frequency applications with reliable operation. The FET also has a fast turn-off time compared to bipolar transistors, hence it is preferred in many switching applications. Its low gate-source capacitance makes it suitable for use in high frequency switching applications.
The working principle of the IRFD213 FET transistor is quite simple. Electricity is passed through the source and the drain terminals of the FET in order to control the flow of current between them. The FET is typically operated in a depletion mode; meaning whenever a gate voltage is applied to the gate terminal, the current passing through the FET turns off. On the other hand, when no gate voltage is applied, the current passing through the FET remains on. This is the working principle of the IRFD213 FET transistor.
In terms of its various application fields, the IRFD213 is used in a wide range of applications. It is extensively used in power supplies and electronic switching applications like switches, level shifters, voltage regulators, amplifiers, and transmitters. The IRFD213 also works great in high frequency applications, as it has low gate-source capacitance. In addition, the FET transistor is preferred in switching applications due to its fast turn-off time, which helps in reducing the power consumption in an electrical circuit.
Other applications of IRFD213 FET transistors are switch mode power supplies, choppers, motor drivers, circuits with low input capacitance, etc. The FET can also be employed in analog applications like amplifiers and oscillators.
The IRFD213 is a single FET type transistor that is popularly used in commercial, industrial and ethnic applications. It is specially designed for switching applications, where low drain-source capacitance and low gate-source capacitance are the most important features. It has a wide range of applications, including power supplies, electronic switching applications, amplifiers, transmitters, choppers, motor controllers, and many more. The IRFD213 works on the principle of passing electricity through the source and the drain terminals of the FET in order to control the flow of current between them. The FET transistor is operated in depletion mode, meaning whenever a gate voltage is applied to the gate terminal, the current passing through the FET turns off. It is preferred in many switching applications due to its fast turn-off time, low input capacitance, and low gate-source capacitance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IRFD214PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 450MA 4-... |
| IRFD113 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 800MA 4-D... |
| IRFD210PBF | Vishay Silic... | -- | 5760 | MOSFET N-CH 200V 600MA 4-... |
| IRFD224PBF | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 250V 630MA 4-... |
| IRFD9110 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 0.7A 4-D... |
| IRFD120PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
| IRFD9014PBF | Vishay Silic... | -- | 1132 | MOSFET P-CH 60V 1.1A 4-DI... |
| IRFD020PBF | Vishay Silic... | -- | 1337 | MOSFET N-CH 50V 2.4A 4-DI... |
| IRFDC20 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 320MA 4-... |
| IRFD9120 | Vishay Silic... | -- | 300 | MOSFET P-CH 100V 1A 4-DIP... |
| IRFD420 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 370MA 4-... |
| IRFD110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1A 4-DIP... |
| IRFD024PBF | Vishay Silic... | 1.04 $ | 6253 | MOSFET N-CH 60V 2.5A 4-DI... |
| IRFD9123PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 1A HEXDI... |
| IRFD310PBF | Vishay Silic... | -- | 1416 | MOSFET N-CH 400V 350MA 4-... |
| IRFD110PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1A 4-DIP... |
| IRFD9123 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 1A 4-DIP... |
| IRFD120 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
| IRFD9113 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 600MA 4-D... |
| IRFD014 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 1.7A 4-DI... |
| IRFD9020PBF | Vishay Silic... | -- | 884 | MOSFET P-CH 60V 1.6A 4-DI... |
| IRFD213 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 450MA 4-... |
| IRFD9220 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.56A 4-... |
| IRFD224 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 630MA 4-... |
| IRFD9014 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.1A 4-DI... |
| IRFD320 | Vishay Silic... | -- | 1000 | MOSFET N-CH 400V 490MA 4-... |
| IRFD9024 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A 4-DI... |
| IRFD9220PBF | Vishay Silic... | -- | 999 | MOSFET P-CH 200V 0.56A 4-... |
| IRFD9010PBF | Vishay Silic... | 1.04 $ | 3679 | MOSFET P-CH 50V 1.1A 4-DI... |
| IRFD9110PBF | Vishay Silic... | -- | 502 | MOSFET P-CH 100V 0.7A 4-D... |
| IRFD310 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 400V 350MA 4-... |
| IRFD113PBF | Vishay Silic... | 0.76 $ | 1000 | MOSFET N-CH 60V 800MA 4-D... |
| IRFD210 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 600MA 4-... |
| IRFD9210PBF | Vishay Silic... | -- | 536 | MOSFET P-CH 200V 0.4A 4-D... |
| IRFD024 | Vishay Silic... | 1.4 $ | 1000 | MOSFET N-CH 60V 2.5A 4-DI... |
| IRFD9010 | Vishay Silic... | 1.03 $ | 1000 | MOSFET P-CH 50V 1.1A 4-DI... |
| IRFDC20PBF | Vishay Silic... | 0.78 $ | 1000 | MOSFET N-CH 600V 320MA 4-... |
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IRFD213 Datasheet/PDF