IXFH80N65X2-4 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFH80N65X2-4 is a super-junction MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) used in power applications. This device is a N channel type, meaning it has a drain connected to source and source connected to ground. It is also used in a variety of power control applications and offers fast switching capabilities. The main features of the IXFH80N65X2-4 include superior power efficiency, low power losses, robust switching capabilities, and wide voltage range.

In terms of the working principle, the IXFH80N65X2-4 uses the well-known structure of the MOS transistor. It is built using two N-type transistors connected to each other with a gate oxide layer in between. When a current is supplied on the gate electrode, it creates an electric field across the device and changes the resistance of the channel. This reduces or increases the flow of current from the drain to the source, depending upon the magnitude of the current, thus controlling the amount of power delivered.

The versatile IXFH80N65X2-4 can be used in many different applications, such as power converters, switching power supplies, and high-efficiency motors. It is suitable for a wide range of input voltages, making it ideal for applications that require different levels of power output. In addition, due to its low reverse-recovery characteristics, it is also ideal for use in resonant converter applications.

The IXFH80N65X2-4 is capable of handling high current levels, which makes it suitable for the most demanding power supplies. It also features an optimized package design, allowing it to be mounted in the most space-constrained applications. Furthermore, its low gate charge ensures superior switching capabilities, making it the ideal choice for higher frequency applications.

In summary, the IXFH80N65X2-4 is a reliable and high-performance MOSFET, suitable for a wide range of power control applications. Its N channel type structure and robust switching capabilities ensure superior power efficiency, reduced power losses, and fast switching capabilities. Its versatile design further makes it suitable for use in a variety of input and power output applications. Therefore, it is the ideal choice for power engineers looking to create reliable and efficient power designs.

The specific data is subject to PDF, and the above content is for reference