Allicdata Part #: | IRFD9123-ND |
Manufacturer Part#: |
IRFD9123 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 1A 4-DIP |
More Detail: | P-Channel 100V 1A (Ta) Through Hole 4-HVMDIP |
DataSheet: | IRFD9123 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 600mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF9123 is a type of field effect transistor (FET). FETs are transistors that use an electric field to regulate the flow of current as opposed to using the traditional voltage source. The IRF9123 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a type of single-gate FET, which typically has four terminals – a source, drain, gate, and bulk.
Applications of IRF9123 Include
- Switching
- Amplification
- Power Conversion
- Logic Gates
- Data Acquisition
- Signal Processing
The IRF9123 can be used in a range of applications, including power conversion, DC-to-DC power supplies, audio amplifier circuits, logic gates, data acquisition, and signal processing. It is especially useful for high-current devices such as DC motors and LED lights. Its extremely low gate-source capacitance makes it an ideal choice for high-speed devices.
Working Principle of IRF9123
The FET operates using the principle of voltage control. By applying a voltage to the gate, a charge is induced in the channel region under the gate. This channel region then becomes conductive. By controlling the flow of charge in this manner, the overall current flow from the source to the drain can be regulated. The MOSFET has three primary regions of operation – an input region, a channel region, and an output region.
In the input region, the source and gate act as two independent terminals, and the gate is used to control the flow of current in the channel region. The input region can be either positively or negatively biased – this is used to set the operating point of the FET. By increasing the voltage applied to the gate, the conductivity of the channel increases, resulting in increased current flow.
In the channel region, the current flow is controlled by the electric field that is created between the gate and the source. As the voltage applied to the gate is increased, the electric field increases, resulting in a higher conductivity in the channel. In the output region, the current flowing from the source to the drain is limited by the gate voltage.
The IRF9123 is commonly used to control current flow in high-power devices, such as DC motors and LED lights. It is also used in a variety of other applications, such as audio amplifier circuits, logic gates, and data acquisition. The extremely low gate-source capacitance of the IRF9123 makes it an ideal choice for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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