Allicdata Part #: | 2N7002VTPMSTR-ND |
Manufacturer Part#: |
2N7002V-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | MOSFET 2N-CH 60V 0.28A SOT-563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 280mA 150mW Su... |
DataSheet: | 2N7002V-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 280mA |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 150mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The 2N7002V-TP is a general purpose N-channel logic level enhancement mode field effect transistor (FET). It is designed to operate up to 200V and support load current up to 1A. The device is characterized with two gate thresholds: Logic level threshold, and standard threshold voltage.
Why Use 2N7002V-TP?
The 2N7002V-TP offers flexibility for applications where lower gate threshold voltage is needed at high voltage conditions, such as in automotive and industrial applications. It offers features like low RDSon and fast switching speeds, as well as industry leading compact SOT-223 packaging.
2N7002V-TP Field of Applications
The 2N7002V-TP is suitable for use in various types of electronic devices, including: digital logic circuits, switching power supplies, switching regulators, lighting control systems, automotive battery management systems, heavy current DC-DC converters, and HVAC control systems. It is also used in general-purpose applications as a replacement for other FETs.
2N7002V-TP Working Principle
The 2N7002V-TP is a logic level enhancement mode MOSFET. It utilizes the voltage between the gate and the source terminal to regulate the current flow between the drain and source terminals. The channel of the 2N7002V-TP is made of thick vertical p-type material sandwiched between two thin n-type material layers in between the source and the drain region. When a positive voltage is applied to the gate, it creates a repelling force and the channels conducts current. This phenomenon is known as the working principle of FETs.
2N7002V-TP Arrays
The 2N7002V-TP is also available as an array which provides higher package density, simpler printed circuit board routing, and superior thermal resistance. The array consists of four FETs connected serially between two gates and two sources. The array requires only two pins to connect, and the gates are connected in parallel to form one common gate, which simplifies the circuit design. It also provides protection against electrical noise and offers superior thermal performance due to the integrated heat sink.
Conclusion
The 2N7002V-TP is a versatile and feature packed device which offers innovative advantages for automotive and industrial applications. It is suitable for use in a variety of circuits, and can be supplied as an array if higher package density or superior thermal resistance is needed. The device’s working principle provides consistent and reliable performance when used in appropriate applications.
The specific data is subject to PDF, and the above content is for reference
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