2N7002K-T1-E3 Discrete Semiconductor Products

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The 2N7002K-T1-E3 is a single N-channel Enhancement mode Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a popular model due to its low on resistance, low gate charge and relatively low cost. It has a drain-source breakdown voltage of 20V with a drain-source on resistance of 0.035µm. The part uses a silicon-based process and an ESD protection scheme, making it suitable for many applications.

The 2N7002K-T1-E3 is mainly used in power switching applications such as an electronic switch. It can also be used as a linear amplifier, voltage regulator or voltage booster. It can be used in a wide variety of applications, such as automotive, audio, home appliances and industrial automation. The MOSFET can be used for DC-DC conversion, motor control and power management. It can also be used for AC-DC conversion or for DC motor driving.

One of the advantages of using a 2N7002K-T1-E3 is its low on-resistance. This allows for higher switching frequency, higher current, and higher voltage. Its low gate charge also reduces power consumption, making it an efficient switch. The device is also soft-start enabled, meaning it is able to start up smoothly and quickly.

The working principle of the 2N7002K-T1-E3 is based on the electron tunneling effect. A positive gate voltage slightly reduces the width of the channel between source and drain. This causes a reduction in channel resistance, which results in a current flow between source and drain. The current between source and drain is proportional to the applied gate voltage and can be adjusted by changing the gate voltage.

The 2N7002K-T1-E3 is a great MOSFET for many applications. Its low on resistance, low gate charge and ESD protection make it suitable for a wide variety of applications. Its soft-start feature makes it ideal for power applications that require quick response times. Its electron tunneling effect also ensures precise control of current and voltage.

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