2N7000RLRAG Discrete Semiconductor Products

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The 2N7000RLRAG is a small Signal Field Effect Transistor (FET) that is ideal for general purpose and low-power amplifier applications. It is designed to operate at low currents with a maximum power dissipation of 500mW. This makes it perfect for low voltage applications where power consumption and dissipation are critical. The 2N7000RLRAG has an extended operating temperature range of -55°C to 125°C. It also has a breakdown voltage of 30V, a reverse transfer capacitance of 1pF, and an on-resistance of 30ohms.

The 2N7000RLRAG is a n-channel metal oxide semiconductor (MOS) FET which is a voltage-controlled four-terminal device. It uses the gate voltage to control the current flow between the source and drain terminals. When a gate voltage is applied, it creates an inversion layer in the depletion region of the MOS device. This inversion layer acts as an electric field which controls the current flow between the source and drain terminals. In this way, the MOSFET is capable of creating an amplification effect that can be used for switching and controlling signals.

The 2N7000RLRAG is used in a wide range of applications such as audio amplifiers, power amplifiers, RF amplifiers, analog and digital circuits, power supply design, and low-noise amplifier designs. It is also suitable for the design of functional blocks such as threshold regulators, pre-drivers for motor circuits, inverters, and voltage-controlled oscillators.

The working principle of the 2N7000RLRAG involves the control of current flow between the source and drain terminals by the application of a voltage to the gate terminal. When a gate voltage is applied, it creates an inversion layer in the depletion region of the MOS device. This inversion layer acts as an electric field that can control the amount of current that flows between the source and the drain terminals. As the gate voltage is increased, the electric field is increased and this causes the current flowing between the source and drain terminals to increase as well. Consequently, the 2N7000RLRAG can be used to amplify signals, or to switch them off completely.

The 2N7000RLRAG has a low gate-source capacitance which enables it to respond quickly to input signals. It also has a fast turn-off time which reduces power losses and improves efficiency. This makes the 2N7000RLRAG ideal for use in high-speed switching applications such as speed control of DC motors.

In summary, the 2N7000RLRAG is a small signal FET that is perfect for general purpose and low-power amplifier applications. Its extended temperature range and low gate-source capacitance makes it ideal for a wide range of applications, including audio amplifiers, power amplifiers, RF amplifiers, analog and digital circuits, power supply design, and low-noise amplifier designs. Its fast turn-off time and low on-resistance also make it great for use in high-speed switching applications such as speed control of DC motors.

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