2N7002TA Allicdata Electronics

2N7002TA Discrete Semiconductor Products

Allicdata Part #:

2N7002TR-ND

Manufacturer Part#:

2N7002TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 115MA SOT23-3
More Detail: N-Channel 60V 115mA (Ta) 330mW (Ta) Surface Mount ...
DataSheet: 2N7002TA datasheet2N7002TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 330mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2N7002TA transistor is a widely used FET (Field Effect Transistor) equipped with various features that allow it to provide greater performance than other types of transistors. This type of device is manufactured by Panasonic, and it is designed for analog and digital switching and amplification in both linear and power applications. It is mostly used to amplify signals, control current and switch circuits.

The 2N7002TA transistor is made from planar technology and consists of a single MOSFET (Metal Oxide Silicon Field Effect Transistor). It has a single drain, gate and source terminals and is available as an N-channel type device. It has a very low on-state drain-source resistance as well as a low gate-source voltage threshold that enable it to handle large currents, which makes it ideal for high power switching applications. It also features a P-channel type device, making it ideal for low power applications.

The 2N7002TA can be used in many applications that require high power, high frequency, and low-level signals, such as high-speed switching, power switching, and voltage regulation. It is also suitable for applications that require low power consumption and low noise emission. Its maximum drain-source voltage is 60V, and the maximum drain current is 200mA. Its maximum power dissipation is 428mW, so the applications it can be used in are limited to low-power applications with low current requirements.

The 2N7002TA device performs its function through the use of an internally developed MOSFET device. This device utilizes the electric field effect to control the flow of electrical current through the device. It has a higher input impedance and higher operating speed than many other transistors, which makes it useful for both analog and digital applications.

The 2N7002TA transistor can be used in a wide range of applications, such as motor control, switching applications, and amplifiers. It is best suited for applications where low-level signals are required. This device is also used in the control of LED lighting and switch dimmers, thanks to its high input impedance and low operating speed.

In conclusion, the 2N7002TA is a widely used FET transistor. It provides a higher operating speed and higher impedance than many other transistors, which makes it ideal for applications requiring low-level signals. Its single drain, gate and source terminals allow it to handle large currents, making it an ideal choice for high power switching applications. It is also suitable for applications that require low power consumption and low noise emission.

The specific data is subject to PDF, and the above content is for reference

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