2N7002WKX-13

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2N7002WKX-13 is a kind of MOSFET, which is a metal-oxide field-effect transistor. The 2N7002WKX-13 is commonly used as a P-type metal-oxide field-effect transistor, which has become a popular choice in many industrial and commercial applications with its good performance and low cost. This article will be mainly discussing the application fields and working principle of the 2N7002WKX-13.

Application Fields of 2N7002WKX-13

The 2N7002WKX-13 is mainly used in high frequency switching applications, such as power conversion and amplification. Because of its good performance, it is also widely used in computers, phones, network communication devices, and other related equipments. In addition, the 2N7002WKX-13 can also be used as a voltage regulator in many kinds of equipment. Other application fields for the 2N7002WKX-13 include low-frequency amplification, high-frequency amplifier, analog integrated circuits, power circuits, embedded systems, and automotive electronics.

Working Principle of 2N7002WKX-13

The 2N7002WKX-13 is a n-channel MOSFET which has three terminals, drain (D), source (S) and gate (G). The source and drain are equivalent to the emitter and collector of a BJT respectively. The MOSFET works in the principle that when a voltage is applied to the gate terminal, a depletion zone will be created which will act as a barrier to the electrons from flowing from the drain to the source. The "on state" of the MOSFET occurs when the gate-to-source voltage Vgs is greater than the threshold voltage Vth. This means the electrons will flow from the drain to the source and the MOSFET will be in a "saturated mode". When the voltage applied to the gate is lower than the threshold voltage, the MOSFET is in the "off" state and the electrons from the drain will not be able to flow to the source.

Conclusion

The 2N7002WKX-13 is widely used in high frequency switching applications due to its good performance and low cost. The MOSFET works in the principle that when a voltage is applied to the gate terminal, a depletion zone will be created which will act as a barrier to the electrons from flowing from the drain to the source. The "on state" of the MOSFET occurs when the gate-to-source voltage is greater than the threshold voltage, and the "off " state occurs when the voltage is lower than the threshold voltage.

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