2N7002W-7-F

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 Ohm @ 50mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	115mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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2N7002W-7-F is a type of single-gate field effect transistor (MOSFET). Field effect transistors (FETs) are three-terminal semiconductor devices that use an electric field to control the flow of current. FETs are used in applications ranging from high-end computers and consumer electronic devices to automotive applications.MOSFETs are one type of FET. They operate as an insulated-gate field-effect transistor, which is more commonly known as an insulated gate bipolar transistor (IGBT). The gate of the MOSFET is insulated from the other two terminals, allowing a signal to pass through it and control the current flowing through the two other terminals. 2N7002W-7-F is a type of N-channel MOSFET, meaning that the gate of the transistor is connected to the N-type semiconductor material (the source terminal). When a positive voltage is applied to the gate of the transistor, carriers (electrons) are attracted to the positive charge and the current starts to flow through the transistor. The amount of current that flows is determined by the gate voltage and the amount of resistance that the source and drain terminals of the transistor impart. 2N7002W-7-F is a very versatile type of MOSFET and can be used in a wide range of applications. The transistor can be used as a switch, to control the current flow to and from devices in a circuit. It can also be used in motor control applications, as well as for controlling LEDs and even for audio amplifiers. In addition to its diverse range of applications, 2N7002W-7-F stands out for its superior performance capabilities. It delivers superior power efficiency, with a Drain-Source On-state resistance (RDSon) of 0.22 Ohm and a Drain-Source Breakdown Voltage (BVDSS) of 60V, making it an ideal choice for applications where both power efficiency and performance are critical. The capabilities of the 2N7002W-7-F also make it a great choice for applications that require high levels of voltage, such as automotive applications. Its combination of high power efficiency, low power losses, and ability to handle higher voltages make it an ideal choice for a variety of automotive applications. Overall, the 2N7002W-7-F is a versatile field effect transistor that can be used in a range of applications, from high-end computers to consumer electronic devices and automotive applications. Its combination of high performance, power efficiency, and ability to handle higher voltages makes it an ideal choice for automotive applications, as well as for applications that require high levels of voltage.

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