2N7002V Allicdata Electronics
Allicdata Part #:

2N7002VTR-ND

Manufacturer Part#:

2N7002V

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 0.28A SOT-563F
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 280mA 250mW Su...
DataSheet: 2N7002V datasheet2N7002V Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563F
Description

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2N7002V is a transistor array from the Transistors - FETs, MOSFETs family and is widely used in the industry today. This transistor array consists of two N-channel enhancement mode depletion mode MOSFETs in a single package, resulting in a compact, small package with two independent transistors in the same package.

The application field of 2N7002V can vary widely depending on the requirements of the product. An example of a popular application is in digital and analog circuits. Digital circuit designers use this device as they provide excellent noise rejection, low voltage drop and low power dissipation characteristics. Its low pass filter characteristics result in a better signal to noise ratio allowing for more accurate and reliable signals.

Another example is in power switching. High side switching between supplies and the load can be done with the 2N7002V transistor array. This is important in applications such as circuit protectors and electronic switches. The low on-resistance of the transistors allows for a continuous current path between the two supplies, removing the need for heavy current carrying components in the system that required high switching currents.

In terms of working principle, the 2N7002V utilizes two N-channel enhancement mode depletion mode MOSFETs in a single package. These MOSFETs allow for the voltage or current between their two terminals, the drain and source, to be controlled through the application of an electrical signal (gate or base). This device works by controlling the output current or the voltage applied to an integrated circuit. The input voltage is regulated by the gate of the MOSFET, while the output current can be controlled by the source of the MOSFET. When a negative voltage is applied to the gate, the MOSFET is able to turn off and restrict the flow of current. When a positive voltage is applied to the gate, the MOSFET is able to turn on and allow current to flow through the circuit. This is what makes the 2N7002V such an efficient transistor array.

The 2N7002V is an important component in the world of transistors and is used for many different applications. The two N-channel enhancement mode depletion mode MOSFETs used in this transistor array allow for low voltage drops and excellent noise rejection, making these devices ideal for digital or analog circuits. And the low on-resistance of the transistors provide an efficient path for the switching current, eliminating the need for heavy current carrying elements.

The specific data is subject to PDF, and the above content is for reference

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