2N7002MTF Allicdata Electronics

2N7002MTF Discrete Semiconductor Products

Allicdata Part #:

2N7002MTFTR-ND

Manufacturer Part#:

2N7002MTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 0.115A SOT-23
More Detail: N-Channel 60V 115mA (Tc) 200mW (Ta) Surface Mount ...
DataSheet: 2N7002MTF datasheet2N7002MTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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2N7002MTF Application Field and Working Principle

The 2N7002MTF is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), designed for switching and amplifier applications. It belongs to the category of single MOSFETs, which means it contains a single gate.

A Field Effect Transistor is a voltage controlled electrical switch. Its drain-source junction serves as a transistor-like switch being capable of switching the current on and off under the electrical control of a voltage applied to the Gate terminal. The channel between the source and drain is a conductive region formed within the MOS structure.

The 2N7002MTF MOSFET possesses a low on-state resistance and is capable of a high level of integration. It provides high power density and high efficiency when used in applications such as solenoids, relays, DC motor controllers, etc. It is also excellent for switching applications such as solar panel inverters, AC power supplies, and power amplifiers.

The working principle of the 2N7002MTF MOSFET is based on the MOSFET structure. It consists of two terminals, the source and drain, and the gate with a potential P-type silicon layer between them. When a voltage is applied to the Gate, the electrons in the P-type silicon are attracted to the Gate, forming an inversion layer. This inversion layer reduces the resistance between the Source and Drain and allows current to flow, thus allowing the transistor to act as a switch.

The 2N7002MTF MOSFET also has high-voltage breakdown ability, making it ideal for high-voltage applications. It operates at higher temperatures than most MOSFETs, making it suitable for applications in harsh conditions such as automotive environments.

The 2N7002MTF MOSFET has proven to be reliable and durable, making it highly popular with systems designers. This MOSFET can be used in a variety of applications, including switching, amplifying and switching applications. With its high level of integration and low on-state resistance, the 2N7002MTF is an ideal choice for various applications.

In conclusion, the 2N7002MTF is a reliable and versatile MOSFET that is suitable for a variety of applications, from switching, amplifying and switching. Due to its excellent performance, it has become very popular among system designers. The characteristics of the 2N7002MTF include a low on-state resistance, high-voltage breakdown ability and high temperature operation, making it ideal for harsh environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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