| Allicdata Part #: | 2N7002T-FDITR-ND |
| Manufacturer Part#: |
2N7002T-7-F |
| Price: | $ 0.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 60V 115MA SOT-523 |
| More Detail: | N-Channel 60V 115mA (Ta) 150mW (Ta) Surface Mount ... |
| DataSheet: | 2N7002T-7-F Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.23000 |
| 10 +: | $ 0.22700 |
| 100 +: | $ 0.22300 |
| 1000 +: | $ 0.20100 |
| 10000 +: | $ 0.14500 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | SOT-523 |
| Supplier Device Package: | SOT-523 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 150mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 115mA (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The 2N7002T-7-F is a P-channel enhancement mode vertical DMVOS (1) field-effect transistor that is commonly used in many circuit designs. This transistor is typically used in applications such as load switching and signal voltage sensing. It is a good choice for low voltage and low power applications that require high-speed switching. The 2N7002T-7-F is available in a variety of packages, including TO-92, micro, and mini packages.
The 2N7002T-7-F is the equivalent of the 2N7002B-7-F, which is a similar device but with reverse pin assignment. This device has the same electrical characteristics and application field as the 2N7002B-7-F.
The 2N7002T-7-F is an enhancement-mode P-channel vertical DMVOS transistor with an on-state current of up to 8.0A (Idrmax) and a voltage rating of 40V (Vdss). It is dual pale in design, which means that it has two different types of channels: P-channel and N-channel. The P-channel has a more positive voltage threshold than the N-channel. The higher voltage threshold makes the P-channel transistor more suitable for use in power and signal switching applications, while the N-channel is more ideal for use in analog circuits.
The 2N7002T-7-F has a very low saturation voltage of 0.2V (Vdsat) and a low gate charge of 7.2nC (Qg). It has an RDS(on) of 8.3mΩ and a maximum operating temperature of 150°C. The device also features a high-performance body diode with an ultra-low forward voltage of 0.2V. The 2N7002T-7-F is also very reliable and has excellent on-state transconductance. Due to its low RDS(on), the device has very low gate-induced voltage drop (GIDL), making it very suitable for use in low power applications.
The 2N7002T-7-F is a fast switching device, making it ideal for use in high frequency applications. The device has a very low input capacitance (Ciss), which helps reduce switching time by reducing the turn-off delay. The device also has a low output capacitance (Coss), which helps reduce switching time by reducing the turn-on delay. The low input and output capacitance of the device allows it to be used in high-speed logic switching circuits.
The working principle of 2N7002T-7-F is based on an enhancement mode Vertical DMVOS transistor. This type of device uses gate-source voltage to "open" the channel and enable the flow of current. Any increase in gate-source voltage will cause the transistor to turn on and will increase the current passing through the device. However, if the gate-source voltage is reduced or eliminated, the transistor will turn off and the current will stop flowing.
The 2N7002T-7-F is a good choice for a variety of applications, such as load switching and voltage sensing. It is versatile and reliable, making it suitable for a wide range of applications including power and signal switching, high frequency logic, and analog circuits. Its low saturation voltage, low gate charge, and high-performance body diode make it an ideal choice for low-power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 2N7002T-TP | Micro Commer... | 0.05 $ | 1000 | MOSFET N-CH 60V 115MA SOT... |
| 2N7051 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 100V 1.5A ... |
| 2N7002LT1 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 0.115A SO... |
| 2N7002V-7 | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 0.28A SO... |
| 2N7002BK,215 | Nexperia USA... | 0.04 $ | 1000 | MOSFET N-CH 60V 350MA SOT... |
| 2N7000G | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 200MA TO-... |
| 2N7002BKVL | Nexperia USA... | 0.02 $ | 1000 | MOSFET N-CH 60V 350MA TO2... |
| 2N7052 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 100V 1.5A ... |
| 2N7002BKW,115 | Nexperia USA... | 0.05 $ | 1000 | MOSFET N-CH 60V 310MA SOT... |
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| 2N7002PS,115 | Nexperia USA... | 0.06 $ | 1000 | MOSFET 2N-CH 60V 0.32A 6T... |
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| 2N7002F,215 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 60V 475MA SOT... |
| 2N7002TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 115MA SOT... |
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| 2N7002,215 | Nexperia USA... | 0.03 $ | 1000 | MOSFET N-CH 60V 300MA SOT... |
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2N7002T-7-F Datasheet/PDF