2N7002T-7-F Allicdata Electronics
Allicdata Part #:

2N7002T-FDITR-ND

Manufacturer Part#:

2N7002T-7-F

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 115MA SOT-523
More Detail: N-Channel 60V 115mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: 2N7002T-7-F datasheet2N7002T-7-F Datasheet/PDF
Quantity: 1000
1 +: $ 0.23000
10 +: $ 0.22700
100 +: $ 0.22300
1000 +: $ 0.20100
10000 +: $ 0.14500
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: SOT-523
Supplier Device Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 2N7002T-7-F is a P-channel enhancement mode vertical DMVOS (1) field-effect transistor that is commonly used in many circuit designs. This transistor is typically used in applications such as load switching and signal voltage sensing. It is a good choice for low voltage and low power applications that require high-speed switching. The 2N7002T-7-F is available in a variety of packages, including TO-92, micro, and mini packages.

The 2N7002T-7-F is the equivalent of the 2N7002B-7-F, which is a similar device but with reverse pin assignment. This device has the same electrical characteristics and application field as the 2N7002B-7-F.

The 2N7002T-7-F is an enhancement-mode P-channel vertical DMVOS transistor with an on-state current of up to 8.0A (Idrmax) and a voltage rating of 40V (Vdss). It is dual pale in design, which means that it has two different types of channels: P-channel and N-channel. The P-channel has a more positive voltage threshold than the N-channel. The higher voltage threshold makes the P-channel transistor more suitable for use in power and signal switching applications, while the N-channel is more ideal for use in analog circuits.

The 2N7002T-7-F has a very low saturation voltage of 0.2V (Vdsat) and a low gate charge of 7.2nC (Qg). It has an RDS(on) of 8.3mΩ and a maximum operating temperature of 150°C. The device also features a high-performance body diode with an ultra-low forward voltage of 0.2V. The 2N7002T-7-F is also very reliable and has excellent on-state transconductance. Due to its low RDS(on), the device has very low gate-induced voltage drop (GIDL), making it very suitable for use in low power applications.

The 2N7002T-7-F is a fast switching device, making it ideal for use in high frequency applications. The device has a very low input capacitance (Ciss), which helps reduce switching time by reducing the turn-off delay. The device also has a low output capacitance (Coss), which helps reduce switching time by reducing the turn-on delay. The low input and output capacitance of the device allows it to be used in high-speed logic switching circuits.

The working principle of 2N7002T-7-F is based on an enhancement mode Vertical DMVOS transistor. This type of device uses gate-source voltage to "open" the channel and enable the flow of current. Any increase in gate-source voltage will cause the transistor to turn on and will increase the current passing through the device. However, if the gate-source voltage is reduced or eliminated, the transistor will turn off and the current will stop flowing.

The 2N7002T-7-F is a good choice for a variety of applications, such as load switching and voltage sensing. It is versatile and reliable, making it suitable for a wide range of applications including power and signal switching, high frequency logic, and analog circuits. Its low saturation voltage, low gate charge, and high-performance body diode make it an ideal choice for low-power applications.

The specific data is subject to PDF, and the above content is for reference

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