2N7002BKM,315 Allicdata Electronics
Allicdata Part #:

1727-4785-2-ND

Manufacturer Part#:

2N7002BKM,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 450MA SOT883
More Detail: N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount ...
DataSheet: 2N7002BKM,315 datasheet2N7002BKM,315 Datasheet/PDF
Quantity: 60000
10000 +: $ 0.05615
Stock 60000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 2N7002BKM,315 is a low-voltage, low-current, single N-channel MOSFET (metal-oxide semiconductor field-effect transistor) used for general switching and amplification. This type of transistor is a three-terminal device that operates as a voltage-controlled switch, allowing an electric current to pass through a device when a certain threshold is met and then blocking the current when the voltage falls below that threshold. The 2N7002BKM,315 has a maximum drain-source voltage of 30V and a drain current rating of 200mA. It has an on-resistance of 2 Ohms and an off-resistance of 20 Ohms. This makes it suitable for use in a variety of applications, including audio amplifiers, temperature sensors, and variable power supplies.

The way a MOSFET works is by allowing a small electric current to control the flow of a larger current. The current from the gate terminal is used to control the flow of current from the source to the drain. When a positive voltage is applied to the gate, a positive electric field is created which attracts electrons and causes holes to form in the semiconducting channel between the source and drain. This creates a low resistance channel through which current can flow, thus allowing the larger current to pass. The larger current is controlled or “gated” by the smaller current, hence the term “MOSFET”.

The key application areas of the 2N7002BKM,315 are switch and amplifier applications. As an electric switch it can be used to control DC and AC voltages, such as home appliances, CCTV cameras and electric motors. As an amplifier it can be used in circuits that require high input impedance and low output impedance, such as in audio amplifiers, power amplifiers and power supplies. It is also used as a voltage regulator, allowing a circuit to operate under varying voltages. It is also useful for temperature sensors, as changes in temperature cause its resistance to change, allowing a temperature to be monitored and regulated.

The 2N7002BKM,315 has a maximum rated power dissipation of 500mW, making it suitable for applications that require a low-power MOSFET. It also has a low on-resistance and fast switching speeds, making it suitable for use in high-frequency applications such as DC-to-DC converters. In summary, the 2N7002BKM,315 is a low-cost, low voltage, low power MOSFET suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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