2N7002BKS,115 Allicdata Electronics
Allicdata Part #:

1727-4786-2-ND

Manufacturer Part#:

2N7002BKS,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 60V 0.3A 6TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Su...
DataSheet: 2N7002BKS,115 datasheet2N7002BKS,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05941
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 295mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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The 2N7002BKS,115 is one of the many different types of transistors available today, falling under the category of FETs, MOSFETs, and Arrays. This type of transistor is an N-channel enhancement-mode field-effect transistor (FET), a type of mosfet which includes the addition of a gate electrode between the source and drain electrodes.

This technology makes the 2N7002BKS,115 suitable for many different applications, such as digital logic circuits and pulse-power circuits. This type of mosfet can be used in a variety of circuit designs, including analog circuits, switching circuits, DC-DC converters, and audio amplifiers.

The working principle of the 2N7002BKS,115 is same as other mosfetts, in that it is a field-effect transistor powered by an electric current. Whenever a current is applied across the gate and source, a voltage is then reflected at the drain. This is called the drain-source voltage. The source-drain voltage indicates the amount of voltage between the source to the drain. It can range between 0.05V and 0.5V, depending on the load.

The 2N7002BKS,115 features high-frequency operation and can be used in a wide range of temperature ranges, starting from -40°C to 125°C. The output capacitance of this mosfet is usually around 4.2 pF/mΩ and the power requirement is usually double the drain current.

The 2N7002BKS,115 is also well-suited for use with inrush current suppression. Due to its low gate threshold voltage and low “on” resistance, this source-drain device can handle high current applications with ease. Furthermore, because it operates in enhancement mode, the device can turn on and off quickly and easily, even with large signal voltage drops.

The 2N7002BKS,115’s two-terminal source-drain voltage is adjustable, providing users with more precise control and flexibility in their design. Additionally, this particular mosfet has an unique low-voltage Power-on-Reset (POR) feature, which enables the device to recover from off to on states without needing to reset the current. This feature makes power on-off controls simpler and easier.

Finally, this mosfet is designed with low-noise and low-current performance in mind. These features make it suitable for use in many digital logic circuits where noise may be an issue. The 2N7002BKS,115 is also designed with a multi-voltage feature, which allows greater flexibility in digital circuitry and allows the transistor to be used in applications with multiple voltage sources.

Overall, the 2N7002BKS,115 is a great choice for those looking for a reliable mosfet. Its operating principles and wide range of applications make it suitable for a variety of uses. Furthermore, the low-noise and low-current performance, along with the low-voltage power-on-reset feature, make it a popular choice for many digital circuit designs.

The specific data is subject to PDF, and the above content is for reference

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