
2N7002BK,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-4789-2-ND |
Manufacturer Part#: |
2N7002BK,215 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 350MA SOT23 |
More Detail: | N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02866 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 370mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2N7002BK,215 is a specific type of field effect transistor (FET). Generally, FETs are an electronically controlled, three-terminal type of semiconductor device, which is used to amplify or switch electronic signals in a variety of applications. The 2N7002BK,215 is a N-Channel enhancement type MOSFET, or metal oxide semiconductor FET, and requires a low current signal at the gate terminal to control a larger current flow between the source and the drain.
The 2N7002BK,215 is mainly used in applications where low-voltage power switching is required. This includes in DC motors, light controllers, fan speed controllers, and other similar applications. It is highly advantageous for these applications because of its superior power handling characteristics and its ability to switch between high and low voltages at a very low current. Furthermore, the 2N7002BK,215 also has a very low static power dissipation, making it suitable for battery powered devices, as well as for applications with dynamic voltage and frequency scaling.
The working principle of the 2N7002BK,215 relies on the presence of an electrically charged gate terminal. When a low voltage signal is applied to the gate terminal, an electric field is generated within the MOS structure that causes the channel between the source and the drain to become thinner or thicker. When the channel is thin, current flow is greatly reduced, while when the channel is thick, current flow is greatly increased. By controlling this electric field, the 2N7002BK,215 can be used to switch between high and low voltages at a very low current.
The 2N7002BK,215 is a very popular field effect transistor, particularly in applications where low voltage power switching is required. This is due to its superior power handling characteristics, its low current requirements, and its low static power dissipation. Furthermore, it is also suitable for battery powered devices, as well as for applications with dynamic voltage and frequency scaling. In conclusion, the 2N7002BK,215 is an excellent power switch for a variety of applications.
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