2N7002BK,215 Allicdata Electronics

2N7002BK,215 Discrete Semiconductor Products

Allicdata Part #:

1727-4789-2-ND

Manufacturer Part#:

2N7002BK,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 350MA SOT23
More Detail: N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount ...
DataSheet: 2N7002BK,215 datasheet2N7002BK,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02866
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 370mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N7002BK,215 is a specific type of field effect transistor (FET). Generally, FETs are an electronically controlled, three-terminal type of semiconductor device, which is used to amplify or switch electronic signals in a variety of applications. The 2N7002BK,215 is a N-Channel enhancement type MOSFET, or metal oxide semiconductor FET, and requires a low current signal at the gate terminal to control a larger current flow between the source and the drain.

The 2N7002BK,215 is mainly used in applications where low-voltage power switching is required. This includes in DC motors, light controllers, fan speed controllers, and other similar applications. It is highly advantageous for these applications because of its superior power handling characteristics and its ability to switch between high and low voltages at a very low current. Furthermore, the 2N7002BK,215 also has a very low static power dissipation, making it suitable for battery powered devices, as well as for applications with dynamic voltage and frequency scaling.

The working principle of the 2N7002BK,215 relies on the presence of an electrically charged gate terminal. When a low voltage signal is applied to the gate terminal, an electric field is generated within the MOS structure that causes the channel between the source and the drain to become thinner or thicker. When the channel is thin, current flow is greatly reduced, while when the channel is thick, current flow is greatly increased. By controlling this electric field, the 2N7002BK,215 can be used to switch between high and low voltages at a very low current.

The 2N7002BK,215 is a very popular field effect transistor, particularly in applications where low voltage power switching is required. This is due to its superior power handling characteristics, its low current requirements, and its low static power dissipation. Furthermore, it is also suitable for battery powered devices, as well as for applications with dynamic voltage and frequency scaling. In conclusion, the 2N7002BK,215 is an excellent power switch for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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