2N7002W-7 Allicdata Electronics

2N7002W-7 Discrete Semiconductor Products

Allicdata Part #:

2N7002WDITR-ND

Manufacturer Part#:

2N7002W-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 115MA SOT-323
More Detail: N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: 2N7002W-7 datasheet2N7002W-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The 2N7002W-7 is a small signal N-channel enhancement mode Field Effect Transistor (FET) packaged in a convenient TO-92 package. It is part of the W Series range of FETs which offer extremely low on resistance compared with other FETs and was designed primarily as a linear amplifier.

Advantages of the 2N7002W-7 include efficiency, low voltage drop and extremely low switching times, making it ideal for applications such as switching, amplifier circuits, and high speed digital gates.

The 2N7002W-7 operates in an enhancement-mode which means that it acts like an open-circuit until a voltage is applied to the gate. The device comprises three pins (Gate, Drain and Source) and has an extremely low Gate-source capacitance of just 1.8pF.

Working Principle

The 2N7002W-7 operates in an N-Channel Enhancement Mode so the working principle works through the Gate-Source voltage, or VGS. By applying a negative voltage to the Gate-Source, it will cause the FET to be in its off-state. In this state, no current can flow between the Source and Drain.

However, when a positive voltage, or VGS, is applied, it will cause the device to start conducting current. This is known as the \'on-state\'. In this state, current will begin to flow through the FET and increase until it reaches the maximum value of 1A.

The 2N7002W-7 also has a built-in protection against overcurrent, which helps to protect the device from damage caused by excessive current.

Application Field & Experimental Aspects

Due to its extremely low gate-to-source capacitance, the 2N7002W-7 is ideal for use in high speed digital gate applications. Its high slew rate and low on-resistance also make it an excellent choice for switching and amplifier circuits. The 2N7002W-7 is also used in dc-dc converters and power supply circuits.

This FET also has a wide range of experiments that can be carried out with it. This includes using it as an oscillator, testing its input and output characteristics, building a Schmitt trigger and testing power dissipation.

The 2N7002W-7 is an excellent choice for electronic enthusiasts and engineers due to its low cost and ease of use. Its high current handling capacity, high voltage breakdown and low on-resistance make it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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