2N7002ET3G Allicdata Electronics
Allicdata Part #:

2N7002ET3G-ND

Manufacturer Part#:

2N7002ET3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 260MA SOT-23
More Detail: N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount ...
DataSheet: 2N7002ET3G datasheet2N7002ET3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 26.7pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2N7002ET3G is a semiconductor device that falls into the category of transistors known as Field Effect Transistors (FETs). Specifically, it is a single-cell MOSFET, which refers to Metal-Oxide-Semiconductor Field Effect Transistor. This particular FET is manufactured by On-SEMI and is designed for a variety of utilizes.

MOSFET transistors are commonly used in logic-level switching applications or in circuits as a transistor switch. When electricity is applied to one of the terminals on the 2N7002ET3G, known as the gate terminal, it will turn the power connected to the device on or off. This capability makes the 2N7002ET3G well suited for a variety of uses, including amplifiers, DC power supplies, voltage regulators, AC power supplies, and motor control systems.

The 2N7002ET3G has several attributes that make it well suited for control applications. It has an operating temperature range of -55°C to 125°C, and it can handle up to 20V of gate offset voltage. In addition, the FET has a high current rating of 300mA, a low on-resistance of 0.32Ω, and it can withstand up to 20V of drain-source reverse voltage. All of these attributes combine to make the 2N7002ET3G an ideal choice for a variety of control applications.

The way in which a MOSFET works is relatively simple. It is composed of a source, a drain, and a gate terminal. The source is connected to the negative side of a power source, and the drain is connected to the positive side of the power source. A voltage is applied to the gate, which then acts as an electromagnetic field, attracting or repelling electrons. This field creates a barrier between the source and the drain, allowing the current toflow only when the field is present.

The 2N7002ET3G is well suited for a variety of applications, such as switching and control. It is easy to use and has a relatively low cost, making it an attractive option for many electronics applications. In addition, it has a wide variety of features, including a high current rating, low on-resistance, and a wide range of temperature tolerance. All of these attributes make the 2N7002ET3G an ideal choice for a variety of switching and control applications.

The specific data is subject to PDF, and the above content is for reference

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