Allicdata Part #: | 2N7002CKVL-ND |
Manufacturer Part#: |
2N7002CKVL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 300MA TO236AB |
More Detail: | N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount ... |
DataSheet: | 2N7002CKVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03079 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 55pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The 2N7002CKVL is a low-voltage N-Channel enhancement mode MOSFET transistors from Vishay, featuring a low on-resistance and Logic Level capability. This device is primarily designed for switching applications, and is suitable for portable products that require low power consumption, low-voltage operation, and small size. The 2N7002CKVL is typically used for battery protectors, DC-DC converters, voltage multiplication, and general switching applications.
Features:
- Low-voltage N-Channel enhancement mode MOSFET transistor
- Low on-resistance
- Logic Level capability
- 1.2V control
- Small size
Application:
- General switching applications;
- Battery protectors;
- DC-DC converters;
- Voltage multiplication;
- Other Automotive applications.
Working Principle:
The operation of 2N7002CKVL MOSFET is similar to other power enhancement mode MOSFETs. It has three electrodes, gate, source, and drain. It has voltage controlled operation, whose switching depend on the voltage applied to the Gate terminal. The source is connected to the negative terminal of the Device with the drain connected to the positive terminal.
When no voltage is applied to the Gate terminal, the 2N7002CKVL will be in its cut-off state. When a positive voltage is applied to the Gate terminal, some of the electrons will be attracted to the Gate, which will increase the conductivity of the channel between the source and the drain. This process is known as enhancement mode and the MOSFET will be in saturated region hence the maximum current will flow between the Source and Drain.
The main feature of 2N7002CKVL is its low on resistance. The on state resistance will be as low as 10-20 milliohms. Such low resistance allows low input voltage and low power consumption. Another feature of this MOSFET is its capability to handle high current and voltage. The maximum drain-source voltage is 60V and it can handle current up to 350mA. Thus the device can be used for high power applications including automotive applications. The switching action of the device is very fast with a maximum switching time of 2 microseconds.
The 2N7002CKVL MOSFET is an ideal choice for switching applications in portable devices due to its low power consumption, low voltage operation, and small size. The device can also be used in automotive applications, battery protectors, voltage doubling, DC-DC converters, and other switching applications.
The specific data is subject to PDF, and the above content is for reference
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