| Allicdata Part #: | 2N7002VADITR-ND |
| Manufacturer Part#: |
2N7002VA-7 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET 2N-CH 60V 0.28A SOT-563 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 280mA 150mW Su... |
| DataSheet: | 2N7002VA-7 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 280mA |
| Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Power - Max: | 150mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | SOT-563 |
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The 2N7002VA-7 is a voltage-controlled field effect transistor (FET) array. It is designed to be used in various applications including automotive, digital and analog circuit design, A/D and D/A converters, control systems, power supplies and other power switching systems. The device is composed of a number of MOSFETs connected in series so that the first transistor can be used for switching and the later ones for current control.
Working Principle
The common-source FET array devices from 2N7002VA-7 belong to a family of MOSFETs characterized by a reduced input capacitance and on-resistance. The gate-source voltage (VGS) controls the current flowing through the device. When VGS is between VGS(on) and VGS(off), the device is partially or completely “on” and a linear transfer characteristic can be obtained. At VGS = VGS(on), the device conductivity is at its maximum. At VGS = VGS(off), the device’s conductivity is at its minimum.
The 2N7002VA-7 has a body-source breakdown voltage, VBS, of 5V which limits the drain-source voltage (VDS). The VDS determines the maximum flow of current through the device. A VDS-VGS curve with different drain-source voltages will typically consist of five distinct portions: (1) Slave- saturation; (2) Linear region; (3) Enhanced-linear region; (4) Steady-state given by VGS = VGS(off); and (5) Slip-region.
The device can also be operated in the reverse-biased mode. When VGS to VDS is negative, there will be a limited current flow through the device. This is due to the minority electro-thermal effect, a mechanism that involves the advection and diffusion of minority carriers.
Application Field
The 2N7002VA-7 FET array can be used in a variety applications including automotive, digital and analog circuit design, A/D and D/A converters, control systems, power supplies and other power switching systems. The device is ideal for applications where low on-resistance and lower input capacitance is necessary.
In automotive circuits, the device can be used for power switching for motors and other components. In digital and analog circuits, the device can be used for high-speed switching, forming the basis of a logic circuit, or for driving the output of a logic circuit. In A/D and D/A converters, the device can be used as a voltage comparator by using the symmetrical VGS-VDS curve.
In control systems such as in relay protection and remote monitoring, the device can be used to detect over-current or over-voltage conditions. Finally, in power supplies and other power switching systems, the device can be used to efficiently switch large currents or voltages, while maintaining low on-resistance values.
The specific data is subject to PDF, and the above content is for reference
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2N7002VA-7 Datasheet/PDF