2N7002PS,115 Allicdata Electronics

2N7002PS,115 Discrete Semiconductor Products

Allicdata Part #:

1727-4791-2-ND

Manufacturer Part#:

2N7002PS,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 60V 0.32A 6TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Su...
DataSheet: 2N7002PS,115 datasheet2N7002PS,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05434
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 420mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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Introduction

The 2N7002PS,115 is a type of Field Effect Transistor (FET) that is used in a variety of applications. It is a surface-mount, bidirectional N-channel FET. It was designed to deliver high-speed switching performance, with a low turn-on voltage and low on-state resistance.

Applications

The 2N7002PS,115 is most commonly used as a power switch in various electronic devices, such as automobile electronics, computer motherboards, and battery-powered devices. It can also be used in power amplifiers, power converters, and high-efficiency power regulators. In addition, it has a low gate-threshold voltage and low off-state leakage current, making it suitable for low-power applications such as integrated motor-controllers.

Characteristics

In terms of its gate-channel characteristics, the 2N7002PS,115 can provide fast switching with low input-capacitance and resistance. Its turn-on and turn-off delays are low, reducing power dissipation. It has a low "on" resistance, making it suitable for higher-voltage applications with minimal on-state resistance loss. It also has a high-speed switching capability, making it suitable for high-frequency switching.

Working Principle

The 2N7002PS,115 operates in a similar way to many other FETs. It features an insulated gate that controls a channel between source and drain. It is triggered by an input voltage that turns the FET on by creating a conducting path between the source and drain. When the input voltage is removed, the device is turned off, severing the connection between source and drain.

When the gate voltage is increased to a pre-set threshold voltage, the electrons in the semiconductor material of the FET form a conducting channel between the source and drain, allowing current to flow. The FET becomes conductive and its output is determined by the input voltage. When the gate voltage is reduced to zero, the channel is closed and current ceases to flow. The device then enters a state of high input impedance, also known as a high-impedance state.

Conclusion

The 2N7002PS,115 is a popular FET device that is used in many different applications. It has a low gate-threshold voltage and low on-state resistance, making it suitable for low-power applications. It also features a low threshold voltage and fast switching, making it ideal for high-frequency switching. Finally, it has low turn-on and turn-off delays, reducing power dissipation.

The specific data is subject to PDF, and the above content is for reference

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